MRF6V2300NR1 Discrete Semiconductor Products |
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Allicdata Part #: | MRF6V2300NR1TR-ND |
Manufacturer Part#: |
MRF6V2300NR1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 110V 220MHZ TO-270-4 |
More Detail: | RF Mosfet LDMOS 50V 900mA 220MHz 25.5dB 300W TO-27... |
DataSheet: | MRF6V2300NR1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 220MHz |
Gain: | 25.5dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 900mA |
Power - Output: | 300W |
Voltage - Rated: | 110V |
Package / Case: | TO-270AB |
Supplier Device Package: | TO-270 WB-4 |
Base Part Number: | MRF6V2300 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MRF6V2300NR1 is a single-equipped, N–channel Platinum HEXFET power MOSFET designed for both load control and linear amplification applications. Manufactured using the latest Insulated Metal Substrate (IMSTM) technology and integrated with a soft recovery controlled built-in Schottky diode, this transistor can be well suited for a wide range of applications. This transistor is ideal for RF power amplifiers and other high-frequency upper-side injection applications.
Application Field
MRF6V2300NR1 is ideal as an amplifier or load switch in switching power supplies, cellular phones, RF amplifiers and other high-frequency electronic systems, such as radio transmitters and receivers. Due to its high flexibility and low threshold voltage, this transistor is suitable for RF power applications up to 150 MHz and can achieve reasonable linear performance at low voltage levels. It may also be used as a high-speed switch in certain applications.
Working Principle
The architecture of a MOSFET transistor is based on its Gate, Source, and Drain. The Gate acts as a switch, controlling the flow of electrons between the Source and Drain. Electrons flow through the Gate when a voltage is applied to it. As the voltage increases, so does the flow of electrons. When a large enough voltage is applied, a channel forms between the Source and Drain, allowing a large number of electrons to flow between them.
The communication between the Gate and the Source/Drain is enabled by an additional MOS layer. This layer is known as the channel. The channel forms a “bridge” between the Gate and the Source/Drain, allowing electrons to flow through the transistor. By adjusting the voltage applied to the Gate, the flow of electrons between Source and Drain can be controlled, thus allowing for the accomplishment of various application requirements.
The MRF6V2300NR1 transistor, in particular, is equipped with an optimized gate design providing a very low threshold voltage and good linear behavior above 4.5 volts. The internal soft recovery controlled Schottky diode provides improved performance in applications with high voltages, such as RF switching and high efficiency linear amplification. The higher breakdown voltage of this transistor also provides greater stability and decreases the chances of an unexpected operational failure.
The specific data is subject to PDF, and the above content is for reference
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