MRF6V4300NBR1

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The MRF6V4300NBR1 is an advanced high voltage, high power transistor from Freescale Semiconductor, Inc. It is a N-Channel, Enhancement Mode, RF power MOSFET, designed using a vertical DMOS power transistor architecture with Freescale’s advanced Power MOS 8 (PMOS VIII) technology.

Application Field

The MRF6V4300NBR1 is suitable for wide range of high power applications in broadcast, land mobile radio, wireless local area networks (WLANs) and industrial, scientific, and medical (ISM) systems operating from 694 to 960 MHz. It is useful for high power transmitters, where a linear gain in the amplifier is desired, and for power amplifiers in base stations.

Working Principle

The MRF6V4300NBR1 is a vertical DMOS power transistor, meaning the drain and source are connected to the same potential on an electrode. The vertical structure consists of a drain structure connected to a semiconductor substrate and the source is connected to the substrate with the gate isolating them. When the gate is gated with DC voltage, a depletion region forms in between the source and drain which is controlled by the gate voltage. This depletion region forms the majority of the transistor\'s current flow, since it is governed by the gate voltage.

The operation of the device is fundamentally similar to that of a N-channel MOSFET; when the gate voltage is greater than the threshold voltage and the drain-source voltage is high enough, the channel is formed and the device is switched on. When the channel is formed, a low resistance conduction path is established between the drain and the source. This low resistance be the tools for amplifying and fully enhancing linear signal power.

The MOSFET also features low gate input capacitance and high current gain as well as high power gain, making it suitable for high power applications requiring linearity and efficiency. It also has high breakdown voltage, which allows for high drain voltage and increased output power. Finally, the MOSFET features temperature compensation functionality that eliminates the need to adjust the gate voltage to compensate temperature changes.

The MRF6V4300NBR1 is ideal for high power, broadcast, land mobile and ISM applications operating between 694-960 MHz. It provides high drain voltage, high breakdown voltage, high power gain, and low gate input capacitance, making it an attractive device for high power applications requiring linearity and efficiency.

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