MRF6VP21KHR6

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The MRF6VP21KHR6 is a high-performing a radio frequency (RF) power transistor device fabricated MX26V. It is designed for RF power amplifier applications in the CDMA, CDMA2000, WCDMA, WiMAX, LTE handset, infrastructure, radar and industrial ISM bands. It is categorized under transistors, FETs, MOSFETs, and RF. As such, it is designed to perform in radios which use frequency modulation (FM) and Amplitude Modulation (AM).

When discussing performance, the MRF6VP21KHR6 has a high-output power ability of 27.75 dBm with a gain of 11.5 dB. It is also meant to work within a wide supply range of 4.75 to 5.25V. Other performance features include a high linearity of 4.2 dB, a PAE (Power Added Efficiency) ranging between 43 and 47%, and an adjustable SSpower consumption of 5.5 mA, 1.5 mA, and 0.75 mA. The device is offered in a standard 6 pin plastic housing that complies with the EIAJ standard, and is suitable for low-cost, surface mount technology using standard soldering techniques.

The MRF6VP21KHR6 has different features that make it ideal for use in modern radio frequency applications. First, it has a ruggedness feature. It is built with a radio frequency power LDMOS process that is able to handle extreme input swings without losing any of its performance capabilities. This feature is important because it allows the device to withstand any voltage, temperature, and electromagnetic interference that it is subjected to.

Second, the device has a built-in temperature compensation technology. This is designed to automatically adjust the bias conditions based on the temperature of the system, making it possible for it to continuously deliver its optimal performance even in the coldest temperature. Finally, the MRF6VP21KHR6 also has an active intermodulation control and low harmonic distortion. The active intermodulation control is meant to monitor the signal and protect it from any distortions and adverse effects from signals in close proximity. The low harmonic distortion is also designed to improve audio and video clarity in applications that require high quality performance.

The MRF6VP21KHR6 is designed to deliver a wide range of benefits in various applications. It is suitable for high-power amplifiers and is ideal for mobile phones, short-range communication, and long range applications. It can also be used in other systems like radar, Base Transceiver Stations or BTS, High Performance Wireless Local Area Networks or HPWLAN, as well as in Electronic and Medical applications.

The MRF6VP21KHR6 works on the MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) principle, which involves the transfer of electrons between n-type and p-type doped semiconductor materials. This type of transistor involves an insulated FET gate which controls the passage of electrons between the two doped material layers. When a current is applied to the FET gate, electron depletion occurs in the region between the two doped layers, allowing current to flow from the source to the drain.

The MRF6VP21KHR6 is a modern radio frequency transistor device designed to provide high performance power in various applications. As a MOSFET designed for radio frequency applications, it works on the principle of controlling electron transfer between two doped semiconductor materials. It has features such as ruggedness, temperature compensation, active intermodulation control, and low harmonic distortion, making it ideal for use in many RF applications, such as in mobile phones, short-range communication, and long-range communication. Additionally, it is suitable for high-power amplifiers, radar, BTS, HPWLAN and medical systems.

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