MRF6VP41KHR6

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MRF6VP41KHR6 is a high-performance enhancement mode gallium-arsenide (GaAs) microwave field-effect transistor (FET). It is designed for use in commercial and defense applications requiring high frequency operation within the RF spectrum, typically from 800 to 1000 MHz. This FET, along with other devices from Freescale Semiconductor, provides reliable and efficient power amplification, often in a small form factor, making it an ideal choice for many wireless communication applications.

Designed using advanced W-band technology and employing a high-efficiency self-biased pseudomorphic high-electron-mobility transistor (pHEMT) process, the MRF6VP41KHR6 could realize a high-power operation with a maximum VCC of 12 V, a maximum drain current of 41 A, and a maximum drain efficiency of 23 dB. Its third-order intermodulation distortion (IP3) of 20 dBm is at least twice as high as the typical performance of similar FETs, while its noise figure of maximum 1.7 dB is significantly lower than other comparable components.

The MRF6VP41KHR6 operates up to 1 GHz, making it well suited for diverse applications such as point-to-point and point-to-multipoint radio, network gateway radio, systems, public safety radio, public and private mobile radio, base station radio, and land mobile radio systems. It is also suitable for use in other wireless applications such as WiMAX, GSM, GPRS, CDMA, Wi-Fi, and satellite-based services. Additionally, due to its high levels of reliability and ruggedness, it can be used in harsh and extreme environmental and radiation conditions.

The structure of the MRF6VP41KHR6 is a layered structure with a metal/semiconductor interface. The layers consist of an n-type GaAs substrate and a thin gate layer. The gate layer is etched in order to define the FET channel and its lead resistors. The thin gate layer isolates the FET channel from the substrate and determines the FET characteristics such as drain current, pinch off voltage, and threshold voltage.

The MRF6VP41KHR6 device works in an enhancement mode as the source-to-drain current is enhanced by the gate voltage. This mode is suitable for microwave applications as the FET is always "ON". The FET is also self-biased, meaning that it operates in linear mode. This makes it robust and easy to use in applications that require precise control of gain and output power.

In summary, the MRF6VP41KHR6 has a broad range of application possibilities due to its ability to cover a wide range of frequency range, high-efficiency power amplification and small form factor. Its robust and reliable structure makes it an excellent choice for operating in extreme environmental conditions and for long-term operational reliability. The self-biased operation of the device further enhances its appeal in many wireless communication applications.

The specific data is subject to PDF, and the above content is for reference