
Allicdata Part #: | MRFE6S9200HSR5-ND |
Manufacturer Part#: |
MRFE6S9200HSR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 66V 880MHZ NI-880S |
More Detail: | RF Mosfet LDMOS 28V 1.4A 880MHz 21dB 58W NI-880S |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 880MHz |
Gain: | 21dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.4A |
Power - Output: | 58W |
Voltage - Rated: | 66V |
Package / Case: | NI-880S |
Supplier Device Package: | NI-880S |
Base Part Number: | MRFE6S9200 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MRFE6S9200HSR5 is a broadband amplifier made of HFET transistors, which stands for High Frequency Enhancement Mode Field Effect Transistor. It is a powerful and reliable device that is used in many applications in the electronic industry.
The MRFE6S9200HSR5 is a single-sideband high frequency amplifier with an adjustable gain. It is used in a variety of applications such as in amplifiers, satellite receivers, TTL circuits, and cable TV transmitters. It can be used as an amplifier to boost the power of signals in wireless designs, amplifying the signal and reducing noise in the process.
The MRFE6S9200HSR5 is rated for a gain of up to 40 for frequencies up to 2GHz. It also has a low noise figure and extremely low distortion. It also has a low input and high output impedance, making it easier to match with other components. This transistor is extremely reliable and robust, making it a popular choice for many applications.
The working principle of the MRFE6S9200HSR5 is based on the principle of enhancement mode field effect transistors. These transistors use a gate voltage to create a field that increases or decreases current flow. The output current varies depending on the gate voltage, resulting in amplified signals from the input. This principle is used in many applications and can be tuned to perform specific tasks.
The MRFE6S9200HSR5 can be used in precision amplifiers and logic circuits. It can be used in automotive, military and commercial applications. It can also be used to improve the performance of satellite receivers, GPS receivers and digital radio systems. The transistor can also be used in radio transmitters and radio repeaters, as well as in circuitry in antennas.
The MRFE6S9200HSR5 is a reliable and high performance transistor. It is used in many high-performance electronic applications. It is highly reliable and can operate at temperatures of -40 to + 105°C and a humidity of up to 95%. It is also very cost effective and can provide a great deal of performance at a low cost.
The MRFE6S9200HSR5 is a versatile and reliable device that is used in many applications in the electronic industry. Its low noise figure and high gain make it ideal for a variety of applications. Its reliable performance makes it a popular choice for many applications and an ideal choice for any application where performance, reliability and cost are important.
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MRFE6S9046NR1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 66V 960MHZ TO-270-... |
MRFE6S9130HR3 | NXP USA Inc | -- | 1000 | FET RF 66V 880MHZ NI-780R... |
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MRFE6S8046NR1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 66V 894MHZ TO-270-... |
MRFE6S9135HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 66V 940MHZ NI-880R... |
MRFE6S9200HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 66V 880MHZ NI-880S... |
MRFE6S9201HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 66V 880MHZ NI-780S... |
MRFE6S9160HSR3 | NXP USA Inc | 0.0 $ | 1000 | FET RF 66V 880MHZ NI-780S... |
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MRFE6S9205HSR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 66V 880MHZ NI-880S... |
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