MRFE6S9046GNR1

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MRFE6S9046GNR1 is a high performance RF (radio frequency) enhancement mode, laterally diffused metal oxide semiconductor field effect transistor (ldmosfet) in a 5 mm x 6 mm Multi-Chip Module (MCM) package. This device is designed for applications requiring high efficiency and linearity, with low noise and harmonic output power.

Application field: This device is ideally suited for microwave power amplifier applications such as cellular base stations, wireless local loop, WiFi, WLAN, multimedia and public wireless systems. These devices are capable of providing greater than 40 W of output power in the 5 GHz transmit range (up to 6 GHz).

Working principle:MRFE6S9046GNR1 uses a special process to combine a single-gate bandgap reference, MOS transistor and a feedback circuit, which provides a very linear response and higher power efficiency. The single-gate bandgap reference creates a constant current source, which allows the ldmosfet to amplify its output power with a higher gain compared to CMOS amplifiers. The feedback circuit ensures a stable operation of the device and helps to reduce harmonic output power. With the improved output power and linearity, the MRFE6S9046GNR1 is an ideal choice when designing power amplifiers for 5 GHz applications.

The MRFE6S9046GNR1 is designed with an advanced technology that allows it to provide a maximum efficiency of up to 75% (at highest power levels) and a linearity of greater than 40 dB. The device also provides a low harmonic noise floor of -45 dB. The device operates from 5 V supply voltage and can operate up to 10 W with 10% backoff at 5 GHz.

The device can be integrated into a variety of standard MCM and SOT-89 packages for flexible system integration. It also supports external device tuning and impedance matching using external components. The MRFE6S9046GNR1 features an enhanced bias architecture and a high level of stability over temperature and depletion voltages.

In summary, the MRFE6S9046GNR1 is a high performance RF enhancement mode transistor that is ideal for use in a variety of applications requiring high power, efficiency, and linearity. It offers an advanced technology, superior efficiency, and superior output power. The device is offered in a variety of standard MCM and SOT-89 packages and features a choice of external device tuning and impedance matching.

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