MRFG35002N6AT1

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The MRFG35002N6AT1 is a high-performance N-channel insulated gate field-effect transistor (IGFET) suitable for use in radio frequency (RF) applications. This part is manufactured with an insulated gate, which uses an external voltage source to control the current flow through the device by switching off and on the conduction path.

The MRFG35002N6AT1 is based on an advanced silicon on insulator (SOI) process which provides excellent electrical characteristics compared to other standard FET structures. This process features superior junction performance, excellent thermal stability and low voltage device protection. This FET provides low on-resistance, high temperature operation and low gate capacitance. It provides excellent RF performance from low frequencies to high frequencies, making it suitable for applications such as amplifiers, switches, and low noise amplifiers.

The MRFG35002N6AT1 is an easy to use, highly reliable device with enhanced switching characteristics. It has high power handling capability that allows it to be used in a variety of high-frequency applications. The extremely high operating voltage of 20V allows it to be used in applications with high power levels.

The working principle of MRFG35002N6AT1 FETs is based on a source-drain channel between the Gate and the Source, which is controlled by an externally applied voltage. When no voltage is applied to the Gate, a depletion layer exists between the Source and Drain contacts and the FET is in its ‘non-conductive’ state, i.e. no current will flow through the device. When a positive voltage is applied to the Gate, it causes an electron flow from the Gate to the Source, which generates an electric field in the Source-Drain channel. This electric field causes a current to flow from the Source to the Drain and the FET is in its ‘conductive’ state.

The MRFG35002N6AT1 FET can be used in a wide range of applications in telecommunication, automotive, consumer electronics and computing. It is suitable for use in circuits such as transmit/receive RF amplifiers, Low Noise Amplifiers (LNA) and switches in cellular base stations, Bluetooth transceivers, Wi-Fi systems, RFID and RF remote control systems, satellite and CATV systems, and other RF applications requiring reliable operation.

The MRFG35002N6AT1 FET provides excellent performance, low power consumption and high power levels. It is suitable for operation at temperatures up to 175°C. It is available in both surface mount and through-hole packages, offering flexibility in design. This device provides designers with a reliable, cost-effective solution for their RF applications.

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