Allicdata Part #: | MRFG35003NT1-ND |
Manufacturer Part#: |
MRFG35003NT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 15V 3.55GHZ 1.5-PLD |
More Detail: | RF Mosfet pHEMT FET 12V 55mA 3.55GHz 11.5dB 3W PLD... |
DataSheet: | MRFG35003NT1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | pHEMT FET |
Frequency: | 3.55GHz |
Gain: | 11.5dB |
Voltage - Test: | 12V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 55mA |
Power - Output: | 3W |
Voltage - Rated: | 15V |
Package / Case: | PLD-1.5 |
Supplier Device Package: | PLD-1.5 |
Base Part Number: | MRFG35003 |
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The MRFG35003NT1 is a FET device manufactured by Vishay Semiconductor. It is a high-performance MOSFET specialized for radio-frequency (RF) applications. This device is also used in other power amplifier applications. This device has a low on-resistance and fast switching speed, which guarantees efficient performance in RF circuits.
The MRFG35003NT1 is a 40V N-Channel MOSFET with an RDS(on) of 0.0035Ω. This device is well suited for applications operating in the frequency range from 0.8 GHz to 6 GHz. This device offers efficient power handling capability up to 7 watts. It also features an internal protection diode which helps protect against ESD. Additionally, this FET also has a low gate-source capacitance, which makes it suitable for switching circuits.
In terms of the MRFG35003NT1\'s working principle, the device is operated using a voltage applied between the gate and source. When the gate voltage is positive relative to the source voltage, it creates an inversion channel and turns on the device. This allows a current to flow between the drain and source. As the gate voltage is increased, the drain-source current increases as well, allowing more power to flow. When the gate voltage is less than the source voltage, the device turns off and the current flow between the drain and source stops.
The MRFG35003NT1 is typically used in RF applications such as power amplifiers, low-noise amplifiers, and power supplies. This device can also be used in other circuits such as switching systems, DC-DC converters, and pulse-width modulation (PWM) circuits. It is also widely used in automotive applications and high-temperature applications where reliability and performance are vital.
The MRFG35003NT1 is a versatile and powerful FET for high-frequency applications. It has a low on-resistance, fast switching speed, and low gate-source capacitance, making it suitable for a variety of circuit designs. It is also highly reliable and operates efficiently in high-temperature and automotive environments. The MRFG35003NT1 is a reliable, efficient, and cost-effective FET device for industrial, automotive, and radio-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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