Allicdata Part #: | MRFG35005MT1-ND |
Manufacturer Part#: |
MRFG35005MT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 15V 3.55GHZ 1.5PLD |
More Detail: | RF Mosfet pHEMT FET 12V 80mA 3.55GHz 11dB 4.5W PLD... |
DataSheet: | MRFG35005MT1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | pHEMT FET |
Frequency: | 3.55GHz |
Gain: | 11dB |
Voltage - Test: | 12V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 80mA |
Power - Output: | 4.5W |
Voltage - Rated: | 15V |
Package / Case: | PLD-1.5 |
Supplier Device Package: | PLD-1.5 |
Base Part Number: | MRFG35005 |
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The MRFG35005MT1 semiconductor device, also commonly known as a MOSFET, is a field-effect transistor designed for radio-frequency (RF) applications. It is manufactured with a special epitaxial process that allows for extremely low on-resistance and fast switching in order to maximise electrical performance. This device is particularly suitable for use in power amplifiers, high-power switching and RF enabling applications, due to its high gain, power handling capabilities and low thermal resistance.
The MRFG35005MT1 semiconductor device is designed for optimum performance at frequencies above 1GHz and its versatility makes it suitable for a wide variety of different applications. It can be used in wireless communications and mobile base stations, and provides a low-noise and low-distortion switching solution. It is also an ideal choice for radio-frequency related applications where low losses and low transient thermal resistance are desired.
The MRF35005MT1 operates according to the normal working principle of a MOSFET. It can be operated in either an enhancement mode or a depletion mode. In the enhancement mode the input voltage is applied to the gate, the drain-source resistance is low, and the current can flow from source to drain. In the depletion mode the input voltage is reversed, the drain-source resistance is high, and the current can only flow from drain to source.
The transistor also features a dual N-channel structure which provides excellent linearization of the Vgs vs. Ids curve, reducing distortion and improving the amplifier\'s performance. This dual N-channel setup also gives the transistor the advantage of having two Source-drain positive termination points, allowing for a symmetrical drive curve and high efficiency performance.
In applications where high efficiency is a priority, the MRF35005MT1 is also well suited. Its low on-resistance and high current-handling capabilities mean that it can minimize energy loss in switching operations and enable users to achieve high levels of efficiency. It\'s also relatively easy to implement and use, making it suitable for most designs.
Because the MRF35005MT1 offers higher performance than many competing products, it is ideal for those who are looking for reliable, high-performance switching at radio frequencies. Its flexibility makes it suitable for a wide range of different applications and its reliable performance ensures that users can be confident in its reliability. Whether used as a switching solution for power amplifiers, high-power switching and RF enabling applications, or for wireless communications and mobile base stations, the MRF35005MT1 is an excellent choice.
The specific data is subject to PDF, and the above content is for reference
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