MRFG35005ANT1

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The MRFG35005ANT1 are a type of MOSFET, short for metal-oxide-semiconductor field-effect transistor, and are defined as part of the RF product family.

A MOSFET is an active semiconductor device comprised of a three-terminal source, gate, and drain with a transistor-level of current/voltage control that functions as a switch and amplifier. The construction of a MOSFET allows current flow over its source-drain path when a voltage applied to its gate terminal meets certain criteria. This criterion is known as the gate-source threshold voltage of the device.

The MRFG35005ANT1 product is an enhancement-mode Gallium Nitride (eGaN) field-effect transistor (FET) designed to operate from 0.2GHz to 6GHz. It is designed to operate with a single +3V to +5V supply and is optimized for linear power amplification and switching applications.

The MRFG35005ANT1 is built on EPC’s GaN on SiC process technology and utilizes a “minor-bitline” structure. This device offers low gate charge and extremely fast switching speed with the additional benefit of low input and output capacitance.

The application field of the MRFG35005ANT1 are mainly related to 5G devices, especially mobile antenna system remote radios, small cell radios, broadband power amplifiers, and digital pre-distortion (DPD) linearizers. These 5G applications need to run at frequencies above 6GHz in order to increase data speed. The MRFG35005ANT1 offers an optimal solution as it operates from 0.2GHz to 6GHz and is particularly efficient when amplified.

The working principle of the MRFG35005ANT1 follows the typical MOSFET structure, with a three-terminal source, gate and drain. Source is connected to the source of electrons, the gate acts as a controller and the drain carries the electrons outward. A current can flow between the source and drain when a voltage applied to the gate reaches the threshold voltage of the device. It is crucial to tailor the device to fit specific needs by setting the Vgs, voltage between the gate and source. Depending on operation mode, either a voltage smaller than the threshold voltage (for power amplifier applications) or larger than it (for switching applications) is needed.

The special feature of the MRFG35005ANT1 lies in the material used, by taking advantage of the Gallium Nitride (GaN) semiconductor structure. GaN offers an ideal technology platform for high-speed, high-operating frequencies and higher output powers than standard semiconductor materials, such as silicon. GaN devices optimize the form factor, reduce operating temperatures and can output much higher power than its silicon counterparts. This makes it an attractive choice to build a high-efficiency device.

The main salient features of the MRFG35005ANT1 are high dynamic performance, high-speed switching capabilities and ultra-low gate charge. This makes the device an excellent choice for any high-frequency application ranging from 0.2GHz to 6GHz. These qualities make the device ideal for applications in 5G Mobile communication systems like mobile antenna systems, small cell radios, broadband power amplifiers and linearizers. Due to its feature set, the MRFG35005ANT1 offers a fab-less solution for small cell and 5G applications.

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