| Allicdata Part #: | MRFG35005MR5-ND |
| Manufacturer Part#: |
MRFG35005MR5 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | FET RF 15V 3.55GHZ 1.5PLD |
| More Detail: | RF Mosfet pHEMT FET 12V 80mA 3.55GHz 11dB 4.5W PLD... |
| DataSheet: |  MRFG35005MR5 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | pHEMT FET |
| Frequency: | 3.55GHz |
| Gain: | 11dB |
| Voltage - Test: | 12V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 80mA |
| Power - Output: | 4.5W |
| Voltage - Rated: | 15V |
| Package / Case: | PLD-1.5 |
| Supplier Device Package: | PLD-1.5 |
| Base Part Number: | MRFG35005 |
Description
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The MRFG35005MR5 is a type of MOSFET transistors designed to operate in the radio-frequency (RF) portion of the electronics spectrum, from around 10 kHz all the way up to 1 MHz. It is also typically referred to as a power-amplifier device. MOSFETs are typically used in circuits for switching and amplification, as well as voltage control. The MRFG35005MR5 is a high-voltage MOSFET device that can handle voltages of up to 600V and is designed for use in applications such as radio frequency amplifiers, broadcast and telecommunications switching, air band transceivers, frequency converters and computer power supplies. Its wide range of applications stems from its high input impedance, high-voltage operation, excellent thermal conduction and superior power density. With such superior characteristics, the MRFG35005MR5 can be used in both single- and multiple-ended amplifiers.MOSFET transistors work by using an electric field to control the conducting capability of a channel formed in the MOSFET. This means that a controlling voltage applied to the gate of the MOSFET can change the amount of current allowed to flow through it from source to drain. In the case of the MRFG35005MR5, the gate voltage is responsible for controlling the output power in the RF signal. The MRFG35005MR5 is an excellent choice for applications where high power is needed and space is limited as its superior thermal characteristics mean that it can operate with greater power compared to similar devices, while still ensuring very low levels of power loss in the circuit. This is due to its wide voltage range, strong protection against overtemperature, enhanced body diode temperature characteristics, and its wide application temperature operating range of -55 to 175 ˚C.In addition to its superior thermal characteristics, the MRFG35005MR5 offers excellent power density. This means that the device can deliver more power in less volume than other comparable devices. This is achieved thanks to the device’s significantly lower on-resistance. This, combined with its improved thermal conduction, means that the MRFG35005MR5 can be used in higher power applications such as radio frequency, microwave and broadband signal amplification, with a minimum of heat dissipation. The device also offers very low switching losses, which makes it especially useful for power-amplifier applications.Overall, the MRFG35005MR5 is an ideal choice for applications requiring superior performance, superior thermal characteristics and excellent power density. Its wide range of applications makes it suitable for a variety of different applications, and its enhanced body diode temperature characteristics, high voltage operation and low on-resistance make it an excellent choice for radio frequency and broadband signal amplification.
The specific data is subject to PDF, and the above content is for reference
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