MRFG35020AR5

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	pHEMT FET
Frequency:	3.5GHz
Gain:	11.5dB
Voltage - Test:	12V
Current Rating:	--
Noise Figure:	--
Current - Test:	300mA
Power - Output:	20W
Voltage - Rated:	15V
Package / Case:	NI-360
Supplier Device Package:	NI-360

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MRFG35020AR5 Application Field and Working Principle

The MRFG35020AR5 is a high-performance GaN power field effect transistor (pFET) manufactured by Mitsubishi Electric. It supports a wide range of applications in the microwave and millimeter-wave frequency range, up to 20GHz, and is capable of very high level of power output. In this article, we will discuss the applications of the MRFG35020AR5 and its working principle.

Applications of MRFG35020AR5

The MRFG35020AR5 is primarily used for amplifier and high frequency switching applications, in which high levels of RF power and accuracy are required. It is often used for high power amplifiers in radio base stations and in various defense communications, radar and navigation applications. It is also used in millimeter wave components such as antennas, transceivers, power amplifiers and switches.

Working Principle

The MRFG35020AR5 is a field effect transistor (FET) and operates using the principles of gate-controlled rectification. When a gate voltage is applied, an electric field is created around the gate of the transistor, which then allows current to flow between the source and drain terminals, thereby creating a current flow between them. This current flow is known as a channel and can be controlled by varying the gate-source voltage.The MRFG35020AR5 is designed to provide high levels of RF power, making it ideal for high power amplifier applications. It consists of multiple layers of gallium nitride (GaN) and uses an MIM cap structure to reduce power loss and improve performance. The transistor is also equipped with a driver circuit for easy bias control.

Conclusion

The MRFG35020AR5 is a high-performance GaN field effect transistor (FET) suited for high frequency RF and microwave applications. It is used in radio base stations and other defense communications, radar and navigation uses, and millimeter wave components, such as antennas and transceivers. The transistor also has an MIM cap structure and is accompanied by a driver circuit for easy bias control.

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