Allicdata Part #: | MRFG35010ANR5TR-ND |
Manufacturer Part#: |
MRFG35010ANR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 15V 3.55GHZ NI360HF |
More Detail: | RF Mosfet pHEMT FET 12V 130mA 3.55GHz 10dB 1W NI-3... |
DataSheet: | MRFG35010ANR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | pHEMT FET |
Frequency: | 3.55GHz |
Gain: | 10dB |
Voltage - Test: | 12V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 130mA |
Power - Output: | 1W |
Voltage - Rated: | 15V |
Package / Case: | NI-360HF |
Supplier Device Package: | NI-360HF |
Base Part Number: | MRFG35010 |
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MFG35010ANR5 is a high frequency, high power, wideband N-Channel switch manufactured by Microsemi. It can operate at frequencies up to 7 GHz and has a 3dB bandwidth of 1.7GHz.
This device is well suited for cellular infrastructure and military/space applications where high power and wideband operation are required. It is also suitable for use as a long range point-to-point link transmitter/receiver switch.
Application fields:
- Cellular Infrastructure: MFG35010ANR5 is a good choice for creating a base station switch that can be switched between transmitter, receiver and other modes. It offers a wide range of power levels, enabling efficient operation.
- Military/Space Applications: MFG35010ANR5 is an ideal choice for applications that require wideband operation and high-power switching.
- Point-to-point links: This switch is suitable for use in long-range point-to-point links. It can switch efficiently between transmitter and receiver modes with high power and wideband operation.
Working Principle:
The MFG35010ANR5 operates by using MOSFET technology. In this device, an N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) is used to act as a switch. The MOSFET is operated in an enhancement mode, meaning that when a positive gate voltage is applied, the MOSFET is turned on and a current flows through the channel. The current is proportional to the value of the gate voltage, allowing for high-power switching.
The device also features an on-board temperature compensation circuit. This circuit monitors the temperature of the MOSFET, and adjusts the threshold voltage of the transistor accordingly. This ensures that the MOSFET will switch on and off at consistent levels even when the temperature varies.
The MFG35010ANR5 is designed to be used with a balanced DC supply, meaning that two power supplies of the same voltage can be used. This ensures that the MOSFET will be symmetrically operated, and that switching is consistent across the entire operation range.
In summary, the MFG35010ANR5 is a versatile and reliable high-frequency, high-power and wideband switch. It is well suited for a variety of applications, including cellular infrastructure, military/space applications and long-range point-to-point links. Its on-board temperature compensation circuit ensures that the switch operates consistently regardless of varying temperatures and its balanced DC supply helps to ensure symmetrical operation.
The specific data is subject to PDF, and the above content is for reference
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