MRFG35003N6AT1

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MRFG35003N6AT1 Application Field and Working Principle

The MRFG35003N6AT1 is a high power, 30V enhancement mode RF RF MOSFET manufactured by STMicroelectronics. This component is ideally suitable for applications operating at high power levels from 10MHz to 6GHz. The component is based on a 0.32um Gate Length and 100nm gate width process technology for improved performance and lower losses.

The component is characterized by normal gate threshold voltage, low on-resistance, low gate charge, high S22 linearity and low reverse Admittance enabling it to deliver good RF power gain in a wide range applications. In addition, it offers very good switching speed due to its low total gate charge and drain-source capacitance.

MRFG35003N6AT1 is well-suited for applications in a variety of industries, such as L-Band, satellite receivers, point-to-point and point-to-multipoint communication systems, radio systems, base-stations, traditional microwave ovens and high-speed digital systems. In addition it also finds use in high power applications such as power amplifiers and power switches.

The MRFG35003N6AT1 is a n-channel enhancement mode MOSFET. The device consists of a source, gate, and drain terminal and a N channel insulated gate oxide. The n-channel device operates with a positive gate voltage and the source is more positive than the gate. When the gate-to-source voltage exceeds the threshold voltage, the channel is formed, allowing current to flow from the source to the drain with no gate current required. This phenomenon is known as the “enhancement effect” and occurs when the voltage applied across the drain and source of the device is larger than the gate voltage. The device is normally used in the linear region of operation when the drain current is essentially proportional to the gate voltage.

At high frequencies, the device operated in the normal mode, where the drain-source voltage, Vds, is constant while the gate voltage and drain current are varied. This mode is used in switch and amplifier design, as well as in RF circuits.

The MRFG35003N6AT1 is a versatile and reliable device for use in RF power amplifiers, switch and mixer circuits. The device offers excellent thermal characteristics, fast switching speed and high linearity, and is an ideal device for various wireless applications.

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