| Allicdata Part #: | MRFG35010MT1-ND |
| Manufacturer Part#: |
MRFG35010MT1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | FET RF 15V 3.55GHZ 1.5-PLD |
| More Detail: | RF Mosfet pHEMT FET 12V 180mA 3.55GHz 10dB 9W PLD-... |
| DataSheet: |  MRFG35010MT1 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | pHEMT FET |
| Frequency: | 3.55GHz |
| Gain: | 10dB |
| Voltage - Test: | 12V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 180mA |
| Power - Output: | 9W |
| Voltage - Rated: | 15V |
| Package / Case: | PLD-1.5 |
| Supplier Device Package: | PLD-1.5 |
| Base Part Number: | MRFG35010 |
Description
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Transistors - FETs, MOSFETs - RF
The MRFG35010MT1 is a N-channel enhancement mode MOSFET from Mitsubishi semiconductor. As a RF (Radio Frequency) component, it is built for applications in which high power and high frequency operation is required. It operates with drain-source voltages between 4 V and 40 V, making it suitable for a wide range of power supply voltages. Due to its high frequency operation, it can be used for applications such as RF power amplifiers, RF switches, RF gain control circuits and more. The MRFG35010MT1 is a unique component, both in terms of its application and its working principle. In regards to its application, it is able to operate in high frequencies and in high power, making it suitable for a range of RF applications. Its high power operation makes it ideal for RF power amplifiers, as it can provide an output power of up to 10 W or higher. Its high frequency operation makes it suitable for use as an RF switch or for gain control, which can detect and amplify very small signals in noisy environments. It is also suitable for use in band-pass filters, allowing only the desired frequencies to pass through while blocking out other frequencies.When it comes to its working principle, the MRFG35010MT1 is a type of field-effect transistor (FET). FETs are transistors that use an electric field to control the conductivity of a channel, as opposed to bipolar transistors which use current. A FET’s conductivity is determined by the amount of charge that is applied at its gate - which is located between the source and the drain. The gate voltage is then used to control the current that passes through the drain and the source. The MRFG35010MT1 is an enhancement mode FET, which means that it needs a minimum voltage of 4 V to allow current to pass through. Under normal operating conditions, this 4 V is applied to the gate and the source, which creates a conductive path between the source and the drain and allows current to flow. The amount of current that passes through the source and the drain is determined by the voltage that is applied to the gate, and it can range from a few μA to up to 30 A or higher. Because of its high frequency operation, the MRFG35010MT1 also has a high level of immunity to noise and broadband signals. This makes it ideal for use in radio frequency applications, where high frequency signals need to be blocked out or amplified.In conclusion, the MRFG35010MT1 is an N-channel enhancement mode MOSFET that is ideal for RF applications. It operates with drain-source voltages between 4 V and 40 V, making it suitable for a wide range of power supplies. It can be used in applications such as RF power amplifiers, RF switches, RF gain control circuits and more, due to its high frequency operation and high power output. In terms of its working principle, the MRFG35010MT1 is a type of FET, and its conductivity is determined by the amount of charge that is applied at its gate. Its high level of noise and broadband signal immunity makes it ideal for use in RF applications.The specific data is subject to PDF, and the above content is for reference
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