MRFG35003M6R5

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	pHEMT FET
Frequency:	3.55GHz
Gain:	9dB
Voltage - Test:	6V
Current Rating:	--
Noise Figure:	--
Current - Test:	180mA
Power - Output:	3W
Voltage - Rated:	8V
Package / Case:	PLD-1.5
Supplier Device Package:	PLD-1.5
Base Part Number:	MRFG35003

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MRFG35003M6R5 is a RF MOSFET transistor used in a variety of applications such as high frequency, power amplifiers and high efficiency switch-mode power supplies. The RF MOSFET is one of the most versatile semiconductor devices since it can be used in any application that requires the use of an amplifier or switching device. This article will discuss the MRFG35003M6R5 application field and working principle. The MRFG35003M6R5 is a high voltage RF MOSFET designed for operation up to 100 MHz with gate voltage up to 200V. It is a 24V N-channel enhancement mode MOSFET, produced using the latest TrenchFET power process and has an ON resistance of 29 milliOhms. This device is perfect for use in high speed switching applications or with other transistor devices in power amplifiers. It has an excellent thermal stability and is capable of dealing with high temperature conditions.The main application field of the MRFG35003M6R5 is in high frequency, high voltage power amplifier stages. It is suitable for applications such as digital TV broadcasting, catv, wireless communication and telecommunication systems. It is also suitable for use in a variety of power supply applications.The working principle of a RF MOSFET can be summarized in three main stages. In the first stage, the gate voltage is applied to the MOSFET which in turn produces voltage in the body or substrate of the MOSFET. This voltage drives current through the MOSFET channel which provides the amplification or switching of the signal. In the second stage, the drain-source voltage is applied to the MOSFET which controls the device’s operation. Finally, in the third stage the current is controlled through the MOSFET channel which controls the output signal of the device.The MRFG35003M6R5 is a high performance, high voltage RF MOSFET that can be used in a variety of applications. Its optimum operation requires a gate voltage of up to 200V and it can handle frequencies up to 100MHz. It has an excellent thermal stability and is capable of dealing with high temperature conditions. It is suitable for applications such as digital TV broadcasting, catv, wireless communication and telecommunication systems. Finally, its working principle can be summarized in the three different stages.

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