![MRFG35010 Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | MRFG35010-ND |
Manufacturer Part#: |
MRFG35010 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 15V 3.55GHZ NI360HF |
More Detail: | RF Mosfet pHEMT FET 12V 130mA 3.55GHz 10dB 9W NI-3... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | pHEMT FET |
Frequency: | 3.55GHz |
Gain: | 10dB |
Voltage - Test: | 12V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 130mA |
Power - Output: | 9W |
Voltage - Rated: | 15V |
Package / Case: | NI-360HF |
Supplier Device Package: | NI-360HF |
Base Part Number: | MRFG35010 |
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The MRFG35010 is a high-performance RF MOSFET (metal-oxide-semiconductor field-effect transistor) that has been designed specifically for wireless applications. It is an enhancement mode device and forms an integral part of most modern wireless communication systems.
MOSFETs are a type of field-effect transistor (FET) that can be used as a semiconductor switch or amplifier. In particular, RF MOSFETs are specifically designed for use at high frequencies, and are therefore suitable for RF and microwave applications. The MRFG35010 has excellent RF performance and high-power handling capabilities making it a great choice for these applications.
A MOSFET is an insulated-gate field-effect transistor, with the gate electrode of the device being insulated from the other two electrodes – the source and the drain – by an insulating layer. The insulated gate is capable of controlling the transistor’s conduction through the physical arrangement and application of an electric field. When a voltage is applied to the gate, the electric field induces a charge carrier inversion in the substrate, modulating the conductivity of the drain and source terminals.
The MRFG35010 has a package style of U-FL, and is designed for use over a wide range of frequencies, from 400MHz to 2600MHz. It has a low gate-drain capacitance of 90fF, a gate series resistance of 2ohm, and a maximum drain current of 4A. Its maximum output power is 50W, making it an excellent choice for high-power applications. The device also has an excellent thermal performance, with a maximum thermal resistance of 0.50 Ct/W.
The MRFG35010 is ideal for use in many different applications, including precision timing, portable radio, and digital radio systems. It can be used in a wide range of RF and microwave applications, such as power amplifiers, oscillators, and modulators. It is also suitable for automotive applications, including engine control units, airbag deployment systems, and ABS systems.
The MRFG35010 has been designed to meet the demands of modern radio communication systems, and provides excellent RF performance while being highly reliable and cost effective. It is a versatile, high-performance device with a wide range of applications in the RF and microwave fields.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
MRFG35003N6AT1 | NXP USA Inc | -- | 1000 | FET RF 8V 3.55GHZ PLD-1.5... |
MRFG35003NR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 15V 3.55GHZRF Mosf... |
MRFG35010NR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 15V 3.55GHZRF Mosf... |
MRFG35002N6R5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 8V 3.55GHZRF Mosfe... |
MRFG35010ANR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 15V 3.55GHZ NI360H... |
MRFG35010ANT1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 15V 3.55GHZ PLD-1.... |
MRFG35003M6R5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 8V 3.55GHZ 1.5-PLD... |
MRFG35003M6T1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 8V 3.55GHZ 1.5-PLD... |
MRFG35003MT1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 15V 3.55GHZ 1.5-PL... |
MRFG35003N6T1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 8V 3.55GHZ 1.5-PLD... |
MRFG35003NT1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 15V 3.55GHZ 1.5-PL... |
MRFG35005MR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 15V 3.55GHZ 1.5PLD... |
MRFG35005MT1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 15V 3.55GHZ 1.5PLD... |
MRFG35005NT1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 15V 3.55GHZ 1.5PLD... |
MRFG35010MT1 | NXP USA Inc | -- | 1000 | FET RF 15V 3.55GHZ 1.5-PL... |
MRFG35010NT1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 15V 3.55GHZ 1.5-PL... |
MRFG35030R5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 15V 3.55GHZ HF-600... |
MRFG35002N6T1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 8V 3.55GHZ PLD-1.5... |
MRFG35005NR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 15V 3.55GHZ PLD-1.... |
MRFG35010 | NXP USA Inc | 0.0 $ | 1000 | FET RF 15V 3.55GHZ NI360H... |
MRFG35010R5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 15V 3.55GHZ NI360H... |
MRFG35010R1 | NXP USA Inc | -- | 1000 | FET RF 15V 3.55GHZ NI360H... |
MRFG35010AR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 15V 3.55GHZ NI360H... |
MRFG35010AR1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 15V 3.55GHZ NI360H... |
MRFG35002N6AT1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 8V 3.55GHZ PLD-1.5... |
MRFG35003ANR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 15V 3.55GHZ PLD-1.... |
MRFG35003ANT1 | NXP USA Inc | -- | 1000 | FET RF 15V 3.55GHZ PLD-1.... |
MRFG35005ANT1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 15V 3.55GHZ PLD-1.... |
MRFG35020AR1 | NXP USA Inc | 0.0 $ | 1000 | FET RF 15V 3.5GHZ NI-360R... |
MRFG35020AR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 15V 3.5GHZ NI-360R... |
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