MRFG35003M6T1

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MRFG35003M6T1 is a P-channel Metal-Oxide Field-Effect Transistor (power MOSFET) produced by ON Semiconductor. It is designed as a high-density, low-resistance power 18-volt transistor, suitable for applications where high performance and low parasitic capacitance, such as power amplifier, switching and DC-DC converter applications, is required.

Application field: MRFG35003M6T1 is a high performance power MOSFET. It is suitable for a variety of applications, such as power amplifiers, DC/DC converters, low-voltage switch mode power supplies, automation power supply modules, etc. It can be used for a variety of applications that require a low resistance device. It is suitable for applications where the power dissipation needs to be optimized and operating temperature ranges are high.

Working principle: The MRFG35003M6T1 is a P-channel MOSFET. It has an N-well dielectric, which is responsible for blocking the drain source voltage, while allowing the necessary current to flow. It also has a super-junction construction, which provides a low resistance path between the source and drain, enabling high efficiencies with low input and output voltage losses.

The MOSFET features a gate-source threshold voltage of -3V, which allows for precise turn-on and off control for switching applications. It also features a high-output current rating on the drain and source, making it top choice for low-resistance paths and high efficiency circuits.

The device features an integrated gate protection diode, which can help to protect the device from electrostatic discharge in hostile environments. In addition, its integrated Zener breakdown region can withstand high voltages, making it very suitable for high voltage applications.

It also features a common source configuration, which makes it suitable for a wide range of applications. It can be used as a transistor switch or a low-side gate-drive transistor, as well as for pulsed applications.

In summary, the MRFG35003M6T1 is a high performance power MOSFET, ideal for a wide array of power amplifier, DC/DC converter, and switching applications. It has a high current rating, low-resistance path, and integrated gate protection diode.

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