MRFG35005NT1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MRFG35005NT1 is a type of metal oxide semiconductor field effect transistor (MOSFET) designed for radio frequency (RF) applications. It is manufactured by STMicroelectronics, a top global semiconductor technology provider.

MOSFETs are a type of field effect transistor that is widely used in many electronic products due to its low power consumption, high transconductance and other unique properties. The MRFG35005NT1 is a N-channel enhancement mode MOSFET that is capable of providing reliable RF operation with excellent linearity, high input impedance and low drain to source on-resistance, making it ideal for RF applications.

In terms of its construction, the MRFG35005NT1 is a dual-gate MOSFET composed of two symmetrical N-channel MOSFETs formed in a single electrical package. This type of construction is beneficial for applications that require improved linearity and larger array sizes, as the dual-gate MOSFET provides improved linearity and twice the current drive of a comparable single gate MOSFET. Additionally, the unit offers a small drain to source capacitance, further enabling improved linearity.

The MRFG35005NT1 offers excellent RF port isolation, making it ideal for many direct conversion radio designs. Additionally, this transistor is suitable for use in a variety of other applications, including low noise amplifiers, power amplifiers and modulation circuits. These devices are offered with a wide range of gate sizes, certified to IPC7351 standards, to ensure an optimized layout for each application.

In terms of operation, the MRFG35005NT1 boasts a wide range of features. This dual-gate MOSFET is designed for operations up to 2 GHz, allowing for usage in many radio applications. Additionally, the device is able to achieve a drain to source breakdown voltage of 30 V and an on state drain current of 17 mA, making it suitable for some high power applications.

Because of its excellent RF performance and reliable operation, the MRFG35005NT1 is an excellent choice for a variety of RF applications. This device offers excellent linearity, low input impedance, wide drain to source capacitance and wide RF isolation, making it a great choice for direct conversion RF applications. Additionally, this MOSFET is able to reach drain to source breakdown voltages of 30 V, making it suitable for some high power applications.

Overall, the MRFG35005NT1 is an ideal option for RF applications, offering excellent RF performance and reliable operation. This device offers excellent linearity, low input impedance, wide drain to source capacitance and wide RF isolation, making it a great choice for direct conversion RF applications. Additionally, this MOSFET is able to reach drain to source breakdown voltages of 30 V, making it suitable for some high power applications.

The specific data is subject to PDF, and the above content is for reference