MRFG35005NR5

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The MRFG35005NR5 is a field effect transistor (FET) used in radio frequency (RF) applications. It is a part of the Goldfeature family of FETs from Fairchild Semiconductor, and is the sister device of MRFG35005NP5. This device can be used for a variety of circuits, including amplifiers and oscillators. The wide application range makes it a popular choice for those looking for a good all-around device.

This device is a N-channel FET, also known as an enhancement-type FET. This means that it allows electrons to flow through it when voltage is applied at the gate. The source and drain have a conductive path between them that is activated or deactivated by the gate signal. The MRFG35005NR5 also includes a built-in ohmic resistor between the gate and source, which provides additional control.

The device is manufactured using standard 0.25µm process technology, allowing for high performance operation. The break-down voltage is rated at 30V, with a maximum drain-source voltage of 25V. The maximum drain-to-gate leakage current is 30nA, with a typical gate-to-source leakage current of 5nA. The device is also rated to handle frequencies up to 9GHz, with a typical noise figure of 4dB.

The device is designed to be used in a variety of applications, such as in amplifiers and oscillators. It is often used in power amplifiers, such as in mobile phones and other communication devices, as well as in other RF applications where a low-noise, high-frequency device is needed. The built-in resistive characteristics make the device useful for frequency mixing, as well as for input stages for receivers.

In addition, the device is rated for both low- and high-voltage operation, making it suitable for both DC and radio frequency applications. The high power handling capability also makes it a good choice for applications that require a lot of power, such as amplifier circuits.

The MRFG35005NR5 is an excellent choice for those who need a reliable FET for RF application. It offers both high performance and wide application range. It is also suitable for high-power applications, and its high-frequency capabilities make it a good choice for those who need a good, reliable device for their RF circuit.

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