
Allicdata Part #: | NE350184C-ND |
Manufacturer Part#: |
NE350184C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | FET RF 4V 20GHZ MICRO-X |
More Detail: | RF Mosfet HFET 2V 10mA 20GHz 13.5dB 84C |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | HFET |
Frequency: | 20GHz |
Gain: | 13.5dB |
Voltage - Test: | 2V |
Current Rating: | 70mA |
Noise Figure: | 0.7dB |
Current - Test: | 10mA |
Power - Output: | -- |
Voltage - Rated: | 4V |
Package / Case: | Micro-X ceramic (84C) |
Supplier Device Package: | 84C |
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The NE350184C is a radio frequency (RF) CMOS power amplifier. It provides high-performance, wideband amplification from 2.3 to 2.6 GHz in a low-voltage, low-current device. It is a high-linearity, high-gain amplifier with excellent noise figure, and is available in a hermetically sealed ceramic or plastic surface mount package.
The NE350184C is intended for use in amplification of microwave signals in wireless communication systems and in high-performance radar and electronic warfare systems. It is ideal for applications such as point-to-point microwave links, point-to-multipoint networks, base stations, and wireless LANs. The device is well suited for use in systems requiring linear high gain and low noise.
The NE350184C is a power amplifier with broad bandwidth and a high-power capability. It is designed using a two-stage, cascode topology with an optimized active inductor power stage to achieve high linearity and high-power performance. The NE350184C is a combined NMOS and PMOS power amplifier with high power supply rejection. An on-chip impedance matching network is integrated to provide optimum signal transfer from the output of the power amplifier to the antenna without the need for external matching components.
The NE350184C has a typical small-signal gain of 18 dB, and a large signal gain of up to 27 dB, with a minimum efficiency of 20%. The device features a 1 dB compression point of 35 dBm, and a maximum output power of 17 dBm. The NF is typically 0.9 dB, and the input and output return losses are 8 dB and 9 dB, respectively. The internal temperature protection circuit limits the output power to 17 dBm at any temperature, thus protecting the device from overheating.
The NE350184C features an on-chip power detector, which enables fast and easy power control. The power detector provides a linear transfer characteristic that is adjustable over a wide dynamic range. The power detector circuit has integrated temperature compensation for optimized regulation over temperature.
The NE350184C is capable of operating over a wide range of supply voltages and temperatures. It can be operated across a wide temperature range of −55°C to +125°C, and with a power supply from 1.8 V to 4.3 V. The NE350184C is well suited for high-frequency system designs.
The NE350184C is an ideal choice for high-power, high-linearity radio frequency applications due to its wideband gain, linear power output, and low current consumption. It is designed to offer a highly reliable, cost effective solution for demanding wireless infrastructure applications.
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