NE3512S02-A

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NE3512S02-A is an efficient, high-speed RF field-effect transistor (FET) manufactured by NEC. It is characterized by low power consumption, high levels of linearity and wide signal bandwidth capabilities. This device can be used in various applications such as power amplifiers, transmitters, mixers and active filters. In addition, its small size makes it a great choice for implementation in portable and low-power applications.

The NE3512S02-A FET is a member of NEC\'s N-channel enhancement mode FET family. It has an operating temperature range of -55°C to +125°C and is rated for a drain-source voltage of 12V. It has a maximum drain current of 65-A. Due to its high performance, the device is commonly used in RF power amplifiers and active filters.

The NE3512S02-A is designed with a two-gate construction and consists of a p-channel and an n-channel field-effect transistor. The p-channel FET is connected to the source, while the n-channel FET is connected between the drain and gate. This configuration allows for high gain and maximum current transfer ratio. In addition, it provides the device with the required high impedance and low input capacitance.

The working principle of the NE3512S02-A is based on the creation of a conducting channel between the source and drain, modulated by an applied gate-source voltage. When a positive gate voltage is applied, the electrons in the channel will be attracted to the gate resulting in an accumulation of electrons and a current flow from source to drain. When the gate voltage is dropped, the electron accumulation will dissipate leading to a decrease in current flow.

The NE3512S02-A can be used in a range of RF power amplifier applications, such as mobile base station amplifiers, wireless LANs, television receivers, and wireless two-way radios. It can be used to improve the linearity of amplifier circuits and to increase the output power of transmitters. The device is also suitable for use in wideband amplifiers, mixers and active filter circuits. In addition, it can be used to create low-noise pre-amplifiers for various applications such as communication, data transmission and instrumentation.

In summary, the NE3512S02-A is a highly efficient, high-speed field-effect transistor, manufactured by NEC. It has low power consumption, high linearity and wide bandwidth capabilities, making it suitable for a range of RF applications including power amplifiers, transmitters, mixers and active filters. The device is designed with a two-gate construction and based on the principle of modulating a conducting channel between the source and drain via an applied gate-source voltage.

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