NE3508M04-A

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	HFET
Frequency:	2GHz
Gain:	14dB
Voltage - Test:	2V
Current Rating:	120mA
Noise Figure:	0.45dB
Current - Test:	10mA
Power - Output:	18dBm
Voltage - Rated:	4V
Package / Case:	SOT-343F
Supplier Device Package:	F4TSMM, M04

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NE3508M04-A Application Field and Working Principle

Introduction

The NE3508M04-A is a transistor designed for use in radio frequency (RF) applications and it belongs to the family of field effect transistors (FETs) or metal oxide semiconductor field effect transistors (MOSFETs). It is designed for amplification of high frequency signals and it can also be used in oscillators. The NE3508M04-A is a monolithic N-channel enhancement mode vertical double diffusion MOSFET, made of gallium arsenide, which enables it to be used in an environment where high temperatures are present.

Features

The NE3508M04-A has a drain-source breakdown voltage of 11 volts, gate-source breakdown voltage of 10 volts, and a maximum drain current of 25 milliamps. It also has a gate capacitance of 27 picofarads at a gate-source voltage of 8 volts, and a drain-source capacitance of 0.18 picofarads at a drain-source voltage of 0.5 volts. In addition, the NE3508M04-A has an on-resistance of 0.2 ohms and an off-state leak of less than 1 nanamps.

Working Principle

The working of a NE3508M04-A follows the same basic principals as any other metal oxide semiconductor FET device, with a few exceptions. The electrical field applied to the device’s gate by the voltage applied to a transistor body affects the conductivity of the channel between the drain and the source of the transistor. When a negative voltage is applied to the gate, electrons are attracted towards the gate, resulting in a decrease in current flow through the transistor. This is known as the “ON” state. When the applied voltage is positive, then the field no longer attracts electrons and the current through the device is virtually zero. The source voltage appears on the drain in both states.

Uses and Applications

The NE3508M04-A is well suited for use in RF amplifiers and oscillators as it offers low on-resistance as well as very low off-state leakage. It is also highly suitable for use in high temperature environments due to its gallium arsenide construction.The NE3508M04-A can be used for amplification of high frequency signals, making it ideal for use in communication systems, satellite navigation systems, VHF radios, and other RF equipment. It can also be used in oscillators where the output frequency is dependent on the gate voltage and capacitive elements.

Conclusion

The NE3508M04-A is a transistor designed for use in RF applications and it belongs to the family of field effect transistors (FETs) or metal oxide semiconductor field effect transistors (MOSFETs). It is designed for amplification of high frequency signals and it can also be used in oscillators. It has a drain-source breakdown voltage of 11 volts, gate-source breakdown voltage of 10 volts, and a maximum drain current of 25 milliamps. It is well suited for use in RF amplifiers and oscillators, communication systems, satellite navigation systems, VHF radios, and other RF equipment.

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