NE3511S02-T1C-A Discrete Semiconductor Products

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The NE3511S02-T1C-A is an advanced model of a field-effect transistor (FET) designed and manufactured by NXP that is commonly used in radio frequency (RF) applications. The NE3511S02-T1C-A is a type of FET called a Metal Oxide Semiconductor FET (MOSFET) which uses the field-effect principle to control the flow of current into the device.

A field-effect transistor is a type of transistor that is able to control the flow of current in an electronic device. Unlike a conventional transistor, a field-effect transistor is able to control the flow of current through the device without relying on the use of a gate voltage. Instead, the FET utilizes an electric field to control the flow of current through the device. In the case of the NE3511S02-T1C-A, this electric field is created by an oxide layer on the semiconductor surface that acts as an insulating barrier.

The NE3511S02-T1C-A is an ideal choice for RF applications such as satellite radio and cell phone systems. This is due in part to its low drain-source voltage (VDS) which helps reduce power consumption and increase performance. Additionally, the NE3511S02-T1C-A has an incredibly low on-resistance of 225 milliOhms which helps increase the efficiency of the device. This is especially useful for RF applications as it enables more power to be transferred to and from the device.

In addition to its low VDS and low on-resistance, the NE3511S02-T1C-A also offers a wide voltage range of -20 to +20 volts which helps to further reduce power consumption while providing a stable and reliable performance. Additionally, the NE3511S02-T1C-A is able to handle large amounts of power and dissipate heat effectively, making it an excellent choice for RF applications.

The NE3511S02-T1C-A is a highly reliable and efficient MOSFET which is ideal for RF applications. Its low VDS and low on-resistance enable the device to provide higher levels of performance, power consumption and heat dissipation, making it an ideal choice for use in satellite radio and cell phone systems. Additionally, the wide voltage range of -20 to +20 volts ensures a stable and reliable performance for all of the device’s applications.

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