NE3514S02-A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NE3514S02-A is a high performance, high frequency and very low noise enhancement-mode MOSFET that is widely used in various applications. It is one of the most popular transistors in the RF, or radio frequency, category. The NE3514S02-A can operate in a frequency range of 10 MHz and up to 1000 MHz, and has a very low noise figure of just 4 dB. The device also has a high output power of up to 17 dBm at 1000 MHz.

The NE3514S02-A is an excellent device for low-noise, high-frequency applications that require high power. It is widely used in radio receivers, high-speed data transceivers and RF amplifiers for microwave and cellular communications. This RF-optimized MOSFET also finds applications in switching, active antenna systems and low-noise mixing and converters. The device is also suitable for use in RF MEMS switches, MMICs and high-speed digital circuits.

The NE3514S02-A comes in an easy-to-use, narrow package. It has a very low on-resistance that allows maximum current flow when switched on, making it ideal for use in high-speed switching applications. The device also has an extremely low drain-source capacitance, which reduces distortion when used in RF amplifiers and active antenna systems. The device has an excellent thermal resistance which helps to minimize thermal noise and reduce the opportunity for thermal runaway.

The NE3514S02-A operates in enhancement-mode, meaning the drain current is increased by biasing the gate voltage in the positive direction. This type of device is used when a switch is required to be turned on and off. When the gate of the device is at 0V, the MOSFET is off and no current flows from the drain. When the gate is biased to a high voltage (Vgs), the channel between the drain and source is enhanced, and this allows a current to flow from the drain to the source. The higher the value of Vgs is, the higher the drain current will be. In this way, the device works like a switch - the higher the Vgs, the more current that is allowed to flow. This makes it ideal for use in applications such as RF amplifiers, receivers and switches.

The NE3514S02-A has a wide variety of features that make it an ideal device for use in RF applications. Its low noise figure and low on-resistance are some of the most desirable characteristics this device offers. Its extremely high frequency of operation and high output power are also exceptional qualities. The NE3514S02-A is one of the best transistors on the market for RF applications, and is sure to be used in many future designs.

The specific data is subject to PDF, and the above content is for reference