NE3521M04-T2-A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NE3521M04-T2-A is a type of Field-Effect Transistor (FET) that is used primarily for Radio Frequency (RF) applications. The device is a single-channel, high voltage, insulated-gate, P-Channel MOSFET, meaning that it is a FET that has a P-type semiconductor material in its conduction channel, and that its gate is insulated so it can be controlled with no direct electrical connection. The NE3521M04-T2-A has a drain–source voltage of +110V, a holding current of 25mA, and an on resistance of 10.7 Ohms. Because of these features, it is often used in power amplifier and switching applications.

The working principle of the NE3521M04-T2-A is related to that of all FETs, which involves a depletion layer in the conduction channel between drain and source, and a strong electric field created by applying a voltage across the gate–source junction. When no voltage is applied to the gate, the conduction channel is depleted of charge carriers, and the current between drain and source is very small. However, when an appropriate voltage is applied to the gate, the depletion layer disappears and charge carriers now fill the conduction channel, allowing current to flow between the drain and source.

In the case of the NE3521M04-T2-A specifically, the device is most often used in power and signal amplifier applications. This is because it has a relatively high voltage capability (110V), as well as a good on/off ratio and low gate-drain capacitance (12.7pF). This means that the device can be used in high power applications, as well as signal applications, where low capacitance and high voltage are important factors. Another application area where this device has found success is in power switching, due to its low hard/soft switching time, low threshold voltage, and temperature stability. These features make it an attractive option for any high power switching application.

In conclusion, the NE3521M04-T2-A is a type of Field-Effect transistor that is well-suited for high voltage and power applications, as well as signal amplifier and switching applications. It has a high voltage capability, low gate-drain capacitance, low hard/soft switching times, and temperature stability, making it a great choice for many RF applications.

The specific data is subject to PDF, and the above content is for reference