NE3515S02-T1C-A Discrete Semiconductor Products |
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Allicdata Part #: | NE3515S02-T1C-ATR-ND |
Manufacturer Part#: |
NE3515S02-T1C-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | FET RF HFET 12GHZ 2V 10MA S02 |
More Detail: | RF Mosfet HFET 2V 10mA 12GHz 12.5dB 14dBm S02 |
DataSheet: | NE3515S02-T1C-A Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | HFET |
Frequency: | 12GHz |
Gain: | 12.5dB |
Voltage - Test: | 2V |
Current Rating: | 88mA |
Noise Figure: | 0.3dB |
Current - Test: | 10mA |
Power - Output: | 14dBm |
Voltage - Rated: | 4V |
Package / Case: | 4-SMD, Flat Leads |
Supplier Device Package: | S02 |
Base Part Number: | NE3515 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NE3515S02-T1C-A is a small signal GaAs MESFET product designed and developed by RFMD. It is used as a low noise amplifier in applications such as CDMA and WCDMA systems. It is also used in amplifiers for satellite receivers and other systems that require low noise performance.
The NE3515S02-T1C-A is a surface-mount device, and its small size and low power consumption make it ideal for modern compact designs. It has a high linearity and low noise figure, with typical values of 0.9 dB and 2.5 dB, respectively. It features a low distortion structure and has a very broad frequency range from 700 MHz to 2.3 GHz.
The NE3515S02-T1C-A is a single-pole-double-throw (SPDT) switch with a typically isolation of over 50dB. It is also a low loss device, with a maximum input power of 15W. The device is capable of providing a great level of output power, with a typical gain of 17 dB. In addition, it has a wide dynamic range.
The device utilizes RFMD\'s 0.25um GaAs pHEMT process technology. It is designed to provide excellent noise figure and linearity, while maintaining a very low power consumption. The process technology used in the NE3515S02-T1C-A provides engineered designs to optimize performance in a rugged and reliable package.
The working principle of the NE3515S02-T1C-A relies on the use of RFMD\'s 0.25um GaAs pHEMT process technology. This process includes the use of an optimum gate width and length to achieve a high level of RF performance. This results in a device that is efficient and offers low noise and high linearity. This technology also makes it possible for the device to deliver high output power, with a maximum power rating of 15W and a typical gain of 17 dB.
The NE3515S02-T1C-A is suitable for a variety of applications, from receivers and broadcast applications, to low noise and high linearity systems. It is ideally suited for use as a low noise amplifier in CDMA and WCDMA systems, and can also be used in satellite receivers, radios and TV systems, among others. It is a reliable device and its small size and low power consumption make it suitable for modern compact designs.
The specific data is subject to PDF, and the above content is for reference
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