NE3503M04-A Allicdata Electronics
Allicdata Part #:

NE3503M04-A-ND

Manufacturer Part#:

NE3503M04-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: FET RF 4V 12GHZ M04
More Detail: RF Mosfet HFET 2V 10mA 12GHz 12dB M04
DataSheet: NE3503M04-A datasheetNE3503M04-A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Discontinued at Digi-Key
Transistor Type: HFET
Frequency: 12GHz
Gain: 12dB
Voltage - Test: 2V
Current Rating: 70mA
Noise Figure: 0.45dB
Current - Test: 10mA
Power - Output: --
Voltage - Rated: 4V
Package / Case: SOT-343F
Supplier Device Package: M04
Description

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NE3503M04-A is a gallium arsenide field-effect transistor (GaAs FET)designed for use in highly reliable, high-frequency amplifiers and oscillators. With a maximum frequency of operation up to 500MHz, NE3503M04-A is widely used in communication systems and frequency synthesizers, as well as in test and measurement equipment.

NE3503M04-A works on the principles of field-effect transistor (FET). It consists of three terminals; the drain, gate and source. Within an FET, the current flow through the transistor is controlled by a voltage or signal applied directly to the gate terminal. This allows very low operating and switching speeds in comparison to traditional transistor designs. Typically, FETs are more efficient and consume less power than regular transistors, making them ideal for use in high-speed, high-reliability applications.

When used as an amplifier, NE3503M04-A is usually configured to operate in a common source topology. In this configuration, the signal is applied to the gate terminal and the amplified signal is taken from the drain. This arrangement allows the signal to be amplified without the need of a biasing network. The output impedance of NE3503M04-A can be conveniently adjusted using a resistor connected from the drain to the source.

NE3503M04-A is ideal for use in RF amplifiers and oscillators. Its high frequency performance and wide dynamic range makes it suitable for use in communications systems, test and measurement equipment, frequency synthesizers and other RF applications. The device has a maximum frequency of operation up to 500MHz with a maximum power output of 30dBm. Its low noise figure further enhances its performance.

In summary, NE3503M04-A is a gallium arsenide field-effect transistor (GaAs FET) designed for use in highly reliable, high-frequency amplifiers and oscillators. Its ability to operate up to 500MHz makes it ideal for use in RF amplifiers and oscillators, communications systems, test and measurement equipment, frequency synthesizers and other RF applications. Its low noise figure and wide dynamic range further enhances its performance. Therefore, NE3503M04-A is perfect for applications where high-reliability and high-speed operation is desired.

The specific data is subject to PDF, and the above content is for reference

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