NE3511S02-A

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The NE3511S02-A is a power amplifier module designed for radio frequency (RF) applications, such as Cellular, ISM, GSM, UMTS, LTE, or WiFi. It is based on a single logic-controlled bi-directional MOSFET, featuring high power gain and high efficiency with excellent linearity. The performance of the NE3511S02-A is optimized for a Vdd=5V and a frequency range of 860MHz to 960MHz.

The circuit in the NE3511S02-A module is composed of a single MOSFET, a bypass capacitor, an input matching network, output matching circuit and an ESD protection circuit. The MOSFET used is the N-channel enhancement-mode GaAs FET, which is capable of handling high power levels. The bypass capacitor (C1) is used to reduce the effect of switch noise on the power amplifier’s performance. The input and output matching circuits are designed to optimize the performance of the amplifier over a wide frequency range.

The working principle of the NE3511S02-A is based on the MOSFET’s bi-directional control capability. This means that the voltage applied to its gate determines the direction of current flow through its drain and source. When a positive voltage is applied to the gate, current flow is from the source to the drain. As the gate voltage gets lower, the flow of current reverses. This bi-directional current flow property can be used to amplify a signal at the source or the drain while maintaining linearity.

The NE3511S02-A amplifier module can achieve excellent linearity and high power gain with a low power dissipation. The module also has a very low noise figure and is able to deliver high power at very low frequencies (down to 860 MHz). Furthermore, it provides superior return loss performance over the entire frequency range, helping to minimize the potential for undesired interference from harmonics or multi-path signals.

The NE3511S02-A is a cost-effective choice for a variety of RF applications, such as cellular, ISM, GSM, UMTS, LTE, or WiFi, where high power gains and high efficiency with excellent linearity and low noise are desired. Furthermore, the low power dissipation and wide frequency range makes it an ideal solution for compact and low-cost radio solutions.

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