NE3513M04-T2B-A

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NE3513M04-T2B-A is a type of Multi-Gate Field-Effect Transistor(MuGFET) which is designed with enhanced characteristics for RF power applications such as WiFi, cell phones, and low-noise amplifiers (LNAs). It is fabricated by MegaChip Technology (MegaChip), a world-leading provider of advanced-generation non-volatile memory (NVM) and custom IC solutions. This device is suitable for use in both active and passive models and it is also available in a variety of packages.

The NE3513M04-T2B-A device is one of the most popular types of Multi-Gate Field-Effect Transistors (MuGFETs). It is made of a CMOS process and consists of two vertically stacked silicon channels which are connected in series. This enables the device to perform efficiently in terms of power dissipation, gain, and noise figure. Compared to other FETs, it offers a greater level of control over the transistor’s characteristics due to the multi-gate architecture.

The NE3513M04-T2B-A device is designed primarily for RF power applications. It is designed to operate under wide range of frequencies and temperatures, while providing desired gain and maximum efficiency. The device offers a power versatility, which makes it suitable for both low- and high-frequency applications in wireless communications such as WiFi, Bluetooth, and long-term evolution (LTE). Moreover, it can be used in various LNA applications, such as TV tuners, GPS, cellular radio and RFID.

The working principle of the NE3513M04-T2B-A is based on the principle of field-effect transistor (FET) operation. This type of transistor is formed on a single semiconductor crystal, which eliminates the need for a gate-to-source insulation in order to allow electrons to flow between the source and the drain. In this type of device, the drain-source current flow is controlled by the gate voltage. This is because electrons are able to flow more easily through a low-resistance channel when it is in a low-injected state. Therefore, by altering the gate voltage, the NE3513M04-T2B-A can switch between two states - on and off.

The NE3513M04-T2B-A has a variety of characteristics for RF power applications, such as high linearity, high operating frequency, low conduction loss and temperature stability. It also has an improved power dissipation, enabling it to be used in active and passive models. In addition, its multi-gate design provides better control and flexibility in terms of performance.

In conclusion, the NE3513M04-T2B-A is a Multi-Gate Field-Effect Transistor designed for RF power applications such as WiFi, Bluetooth, LTE, and LNAs. The device features a multi-gate architecture, allowing it to have enhanced characteristics compared to other FETs. It also has an improved power dissipation, high linearity, and wide operating frequency. As such, it is suitable for use in both active and passive models.

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