NE3516S02-T1C-A

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NE3516S02-T1C-A is a type of field-effect transistor (FET) used for radio frequency (RF) applications. The device is designed to be used in circuits requiring ultra-low noise, low insertion loss and excellent linearity, making it a great choice for applications such as amplifiers, oscillators and RF switches.

An FET is a type of transistor that operates by varying the amount of electric charge that is conducted between the drain and the source terminals. Unlike a bipolar junction transistor (BJT), which controls current flow through a small region of the device, the FET controls current by the use of an electric field. The NE3516S02-T1C-A is a MOSFET (metal-oxide-semiconductor field-effect transistor), which is a type of FET that uses an electric gate to control the current flow along the channel.

The NE3516S02-T1C-A is a low-power FET with a typical on-resistance of 0.04 ohms at 4 volts drain-to-source. It has a maximum drain current of 0.2 amps at 4 volts. The device also has an extremely low maximum gate-source capacitance of only 0.45 pF, which makes it ideal for RF applications requiring low noise and excellent linearity. Moreover, the device can handle frequencies up to 6 GHz, making it suitable for a wide range of RF applications.

The NE3516S02-T1C-A also has a low gate-drain capacitance, which helps to minimize parasitic oscillations and noise. This makes it especially useful in sensitive RF applications. The device also has a very low positive temperature coefficient, which helps to ensure a stable performance over a wide range of temperatures.

The NE3516S02-T1C-A can be used in a variety of RF circuits such as amplifiers, oscillators, and RF switches. It is especially useful in circuits requiring low noise and excellent linearity. The device is also very reliable and can handle frequencies up to 6 GHz. These qualities make it a great choice for RF applications.

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