NE3515S02-T1D-A

The NE3515S02-T1D-A is a type of radio frequency (RF) field-effect transistor (FET) manufactured by NJRC, a leader in the design and development of high-performance RF FETs and modules. This FET was designed specifically for operation in the high frequency (HF) to ultra high frequency (UHF) range. The NE3515S02-T1D-A is a low-noise, broadband FET with a wide range of applications. It has a low thermal resistance, making it suitable for use in high-power, high-temperature systems. The FET is available in either a surface-mount or through-hole package.

The NE3515S02-T1D-A has a peak power gain of 10dB and can operate at temperatures up to 150°C. The FET also has a very low noise figure of 1.5dB. This makes it ideal for applications requiring high performance and low noise, such as in RF amplifiers, frequency mixers, and up/down converters. The FET features a very low capacitance of 0.4pF, which is beneficial for high-frequency applications such as in frequency synthesizers, band switching systems, and phase-locked loop (PLL) circuits.

The working principle of the NE3515S02-T1D-A is fairly straightforward. It is a voltage-controlled device which uses an electric field to control the current flow between two terminals. The way this works is the FET\'s gate terminal is the control element. When a voltage is applied to it, the electric field created will allow current to flow. The source and drain terminals of the FET act as the two electrical contacts through which current flows. When the gate voltage is low, current cannot flow between the two terminals, and the FET is in a “OFF” (non-conductive) state. When the gate voltage is high, current can flow between the two terminals, and the FET is in an “ON” (conductive) state.

The NE3515S02-T1D-A has a wide range of applications due to its low noise figure and wide operating band. It can be used in military and civilian radio applications, such as for multi-frequency synthesizers, phase-locked loops, tuners, and transceivers. The FET is also well-suited for commercial radio communications, satellite communications, and optical communications systems. In addition, the NE3515S02-T1D-A can be used in medical scanning and diagnostic applications, as well as automotive and industrial applications.

The NE3515S02-T1D-A is a high-performance field-effect transistor that is well-suited for use in high-frequency systems. Its low noise figure and high peak power gain make it ideal for a wide range of applications. With its wide operating band, the FET can handle the demands of a variety of systems. The device is available in either a surface-mount or through-hole package, so it can be easily integrated into a system\'s design.