NE3503M04-T2B-A

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The NE3503M04-T2B-A is a state-of-the-art, fast-switching, low-threshold, low-impedance field-effect transistor (FET). It is part of the NE3503 series products from Nikon Electronics, with excellent high-frequency, power handling, and switching performance, up to 3 GHz.

RF, or radio-frequency, applications are ideal for the NE3503M04-T2B-A. The device is commonly used for microwave, satellite, and radar applications. It is also suitable for video, telecom, and CATV systems, Wi-Fi and Bluetooth transmitters, amplifiers and cell-phone base stations.

A field-effect transistor (FET) works as a variable resistor. It is a semiconductor device with three terminals: gate (control), source (input) and drain (output). A voltage applied to the gate, causes the size of the electric field and the size of the depletion region to change. This, in turn, alters the resistance between the drain and source, which is the working principle of the FET.

The NE3503M04-T2B-A features a built-in gate protection circuit that prevents the high dV/dt noise of the input signal from being reflected back to the driver circuit. It also comes with a monitor diode for ESD protection from electrostatic discharge. Additional features of the device include low ON-resistance of 0.2 ohm, an operating temperature range up to 175°C, a low gate drive voltage of 1.8V, and a maximum drain current of 0.2A.

One of the main advantages of the NE3503M04-T2B-A is its high-speed switching performance. It achieves a rise time of 0.6ns and fall time of 0.6ns, with a maximum switching frequency of 3GHz. The device has a low-noise characteristic, which makes it great for applications where noise reduction is a priority.

The NE3503M04-T2B-A is also highly efficient, with a good current capability and high-current gain. The device features an off-source voltage of -2.2V, and a total gate charge of 3.5nC, which allows the device to draw a small amount of power while in operation. This makes it attractive to designers seeking efficient RF solutions.

The NE3503M04-T2B-A FET is an ideal choice for a variety of applications that require low-threshold, fast-switching, and high-power handling capabilities. It is a versatile device that is suitable for RF, video, telecom, CATV systems, Wi-Fi and Bluetooth transmitters, amplifiers, microwave, satellite, and radar applications, as well as cell-phone base stations.

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