Allicdata Part #: | NE3517S03-T1C-A-ND |
Manufacturer Part#: |
NE3517S03-T1C-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | FET RF 4V 20GHZ S03 |
More Detail: | RF Mosfet HFET 2V 10mA 20GHz 13.5dB S03 |
DataSheet: | NE3517S03-T1C-A Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | HFET |
Frequency: | 20GHz |
Gain: | 13.5dB |
Voltage - Test: | 2V |
Current Rating: | 15mA |
Noise Figure: | 0.7dB |
Current - Test: | 10mA |
Power - Output: | -- |
Voltage - Rated: | 4V |
Package / Case: | 4-SMD, Flat Leads |
Supplier Device Package: | S03 |
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The NE3517S03-T1C-A is a unique type of transistor, classified as a Field-Effect Transistor (FET) and having special Radio Frequency (RF) applications. In addition to greater control over what the transistor does, FETs also allow for lower power consumption compared to traditional switching-type transistors.
FETs are semiconductor devices that operate using an electrical field to control the flow of current through a channel between the source and drain, usually made of semiconductor material. This electrical field is generated by the narrow gate section at the entrance to the channel between the source and drain. A voltage applied to the gate creates an electrical field that controls the current flowing through the channel.
The NE3517S03-T1C-A is a N-channel enhancement-type FET that is optimized for Radio Frequency (RF) applications. It operates between the drain and source by creating an adjustable electrical field between them to control the current flowing through the channel. This adjustment is accomplished by applying a voltage to the gate, which attracts mobile charge carriers, electrons or holes, and creates a conductive channel within the material. This conductive channel links the source to the drain and allows a current to flow.
When an RF signal is applied to the gate, it creates a variation in the voltage on the gate. This variation alters the electrical field created between the drain and source, which in turn controls the current flowing through the channel. This strict control makes the NE3517S03-T1C-A ideal for use in RF circuits such as amplifiers, oscillators, and frequency divider circuits.
The NE3517S03-T1C-A features a maximized tolerance to up to 65 volts drain-to-source breakdown rating, as well as a low on-resistance drain-source junction, making it an excellent choice for operating in high-power applications. It also offers a low capacitance gate-drain and gate-source junction, so it can handle up to 700MHz of signal frequency and also has a fast switching time. The NE3517S03-T1C-A can be used in applications such as mobile phones, Wi-Fi routers, base stations, and more. Nothing else on the market offers the same combination of features, making the NE3517S03-T1C-A a great choice for any RF application.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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NE3520S03-A | CEL | 0.0 $ | 1000 | FET RF 4V 20GHZ S03RF Mos... |
NE3520S03-T1C-A | CEL | 0.0 $ | 1000 | FET RF 4V 20GHZ S03RF Mos... |
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