
Allicdata Part #: | NE3513M04-A-ND |
Manufacturer Part#: |
NE3513M04-A |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | CEL |
Short Description: | FET RF 4V 12GHZ M04 4SMD |
More Detail: | RF Mosfet N-Channel GaAs HJ-FET 2V 10mA 12GHz 13dB... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | N-Channel GaAs HJ-FET |
Frequency: | 12GHz |
Gain: | 13dB |
Voltage - Test: | 2V |
Current Rating: | 60mA |
Noise Figure: | 0.65dB |
Current - Test: | 10mA |
Power - Output: | 125mW |
Voltage - Rated: | 4V |
Package / Case: | SOT-343F |
Supplier Device Package: | M04 |
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The NE3513M04-A is a field effect transistor (FET), more specifically an RF MOSFET (metal-oxide-semiconductor FET). It is a type of transistor that uses the flow of electric current through a channel of partly ionized gas, instead of current through a solid semiconductor, to control current flow. The NE3513M04-A is widely used for its excellent linearity over wide frequency ranges and its high-frequency operation capabilities.
The NE3513M04-A is a 4-transistor, self-biased device. It has a simple design, utilizing a single gate structure composed of MOSFETs connected in gate-source and gate-drain configurations. The device has an on-resistance (Ron) of 10 mΩ, an output impedance (Ro) of 6.5 Ω, and a power dissipation of 0.8 W. In addition, the frequency response of the NE3513M04-A is excellent, allowing it to operate at frequencies of up to 1.8 GHz.
The NE3513M04-A has a wide variety of applications. It is used in RF systems and high-speed communications systems including land mobile radios, base stations and cordless phones. It is also commonly found in satellite communications and digital terrestrial television broadcast systems. Its low on-resistance and high frequency capabilities make it ideal for applications such as amplifiers, high frequency switching and broadband receivers. It is also suitable for short-range and microwave applications.
The NE3513M04-A works by generating an electric field between its gate and drain electrodes. As current flows through the device, a voltage is applied to the gate, which changes the resistance of the channel and therefore the current flowing through it. In the case of the NE3513M04-A, this makes it possible to switch between high and low currents with a small amount of energy. The transistor also has a high linearity, meaning that it is capable of operating at a wide range of frequencies without significant distortion.
In conclusion, the NE3513M04-A is a highly versatile RF MOSFET that can be found in many different types of applications. Its low on-resistance and high frequency capabilities make it ideal for frequency switching and amplifying applications, while its linearity allows it to be used in a wide range of high-speed communication systems. It is also suitable for use in short-range and microwave applications. Overall, the NE3513M04-A is an excellent choice for its low cost, excellent linearity and high frequency operation.
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