NE3513M04-A Allicdata Electronics
Allicdata Part #:

NE3513M04-A-ND

Manufacturer Part#:

NE3513M04-A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: CEL
Short Description: FET RF 4V 12GHZ M04 4SMD
More Detail: RF Mosfet N-Channel GaAs HJ-FET 2V 10mA 12GHz 13dB...
DataSheet: NE3513M04-A datasheetNE3513M04-A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: N-Channel GaAs HJ-FET
Frequency: 12GHz
Gain: 13dB
Voltage - Test: 2V
Current Rating: 60mA
Noise Figure: 0.65dB
Current - Test: 10mA
Power - Output: 125mW
Voltage - Rated: 4V
Package / Case: SOT-343F
Supplier Device Package: M04
Description

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The NE3513M04-A is a field effect transistor (FET), more specifically an RF MOSFET (metal-oxide-semiconductor FET). It is a type of transistor that uses the flow of electric current through a channel of partly ionized gas, instead of current through a solid semiconductor, to control current flow. The NE3513M04-A is widely used for its excellent linearity over wide frequency ranges and its high-frequency operation capabilities.

The NE3513M04-A is a 4-transistor, self-biased device. It has a simple design, utilizing a single gate structure composed of MOSFETs connected in gate-source and gate-drain configurations. The device has an on-resistance (Ron) of 10 mΩ, an output impedance (Ro) of 6.5 Ω, and a power dissipation of 0.8 W. In addition, the frequency response of the NE3513M04-A is excellent, allowing it to operate at frequencies of up to 1.8 GHz.

The NE3513M04-A has a wide variety of applications. It is used in RF systems and high-speed communications systems including land mobile radios, base stations and cordless phones. It is also commonly found in satellite communications and digital terrestrial television broadcast systems. Its low on-resistance and high frequency capabilities make it ideal for applications such as amplifiers, high frequency switching and broadband receivers. It is also suitable for short-range and microwave applications.

The NE3513M04-A works by generating an electric field between its gate and drain electrodes. As current flows through the device, a voltage is applied to the gate, which changes the resistance of the channel and therefore the current flowing through it. In the case of the NE3513M04-A, this makes it possible to switch between high and low currents with a small amount of energy. The transistor also has a high linearity, meaning that it is capable of operating at a wide range of frequencies without significant distortion.

In conclusion, the NE3513M04-A is a highly versatile RF MOSFET that can be found in many different types of applications. Its low on-resistance and high frequency capabilities make it ideal for frequency switching and amplifying applications, while its linearity allows it to be used in a wide range of high-speed communication systems. It is also suitable for use in short-range and microwave applications. Overall, the NE3513M04-A is an excellent choice for its low cost, excellent linearity and high frequency operation.

The specific data is subject to PDF, and the above content is for reference

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