NSBC115TDP6T5G Allicdata Electronics
Allicdata Part #:

NSBC115TDP6T5G-ND

Manufacturer Part#:

NSBC115TDP6T5G

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.339W SOT963
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: NSBC115TDP6T5G datasheetNSBC115TDP6T5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.06767
Stock 1000Can Ship Immediately
$ 0.08
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Base Part Number: NSBC1*
Supplier Device Package: SOT-963
Package / Case: SOT-963
Mounting Type: Surface Mount
Power - Max: 339mW
Frequency - Transition: --
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Series: --
Resistor - Emitter Base (R2): --
Resistor - Base (R1): 100 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NSBC115TDP6T5G is a pre-biased array transistors device supplied in a SOIC-8 package, designed for general-purpose applications in stereo and surround sound systems. It is a part of a family of devices with similar power ratings and a low quiescent current. The device is a monolithic integrated circuit which contains 6 NPN transistors arranged in an array configuration.

The NSBC115TDP6T5G features a range of low voltage performance characteristics, including low dropout, low noise and low DC bias. The device combines tightly matched transistor current gains and base-emitter saturation voltages, with a high input impedance and a low idle current. This makes the transistors in the array ideal for a range of applications, such as linear voltage regulator circuits, differential pre-amplifiers, buffered power amplifiers, and more.

The device features a working voltage range of 2V to 16V, and a maximum power dissipation of 1.25W. It also has a high slew rate of 400V/μs. The transistors are designed to provide excellent linearity, low thermal distortion, low power consumption and accurate gain control.

The NSBC115TDP6T5G has a functional block diagram which shows the various parts of the circuit, as well as the various connection points. At the center of the circuit is the array of NPN transistors, which is connected to an input side of the transistors. The output side is connected to the bias voltage, the current sense lines and the feedback signals. This enables the device to be used for a number of different applications, ranging from powering a motor drive system to driving loudspeakers.

The working principle of the NSBC115TDP6T5G is based on the principle of NPN Transistor array. Each transistor in the array is connected to a separate supply of bias voltage and current sense lines. The base current flowing into each transistor is controlled by the sense lines and the feedback signal of the other transistors in the array. The transistor array works together in order to achieve a consistent output bias voltage and current. This allows the device to be used in a large range of applications, such as DC motors and amplifiers.

In conclusion, the NSBC115TDP6T5G is a pre-biased array transistor device designed for general purpose applications in stereo and surround sound systems. It features a range of low voltage performance characteristics, including low drop-out, low noise and low DC bias. The device has a functional block diagram which shows the various parts of the circuit, as well as the various connection points. The working principle of the device is based on the principle of NPN transistor array, allowing it to be used in a range of applications such as DC motors and amplifiers.

The specific data is subject to PDF, and the above content is for reference

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