NSBC123JPDXV6T1G Discrete Semiconductor Products |
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Allicdata Part #: | NSBC123JPDXV6T1GOSTR-ND |
Manufacturer Part#: |
NSBC123JPDXV6T1G |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS NPN/PNP SOT563 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | NSBC123JPDXV6T1G Datasheet/PDF |
Quantity: | 20000 |
4000 +: | $ 0.06549 |
8000 +: | $ 0.06152 |
12000 +: | $ 0.05755 |
28000 +: | $ 0.05292 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Base Part Number: | NSBC1* |
Supplier Device Package: | SOT-563 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 500mW |
Frequency - Transition: | -- |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | 47 kOhms |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NSBC123JPDXV6T1G is a pre-biased array of bipolar transistors, composed of NPN transistors in a three-row configuration. The array is designed with an integrated bias circuit that structure to source voltage base-currents, resulting in lower power dissipation and improved static linear behavior. With a compact, low-profile surface-mount package, the NSBC123JPDXV6T1G provides a wide range of benefits and is suited for a variety of applications.
Features
The main features of the NSBC123JPDXV6T1G are:
- Integrated bias circuit to reduce power dissipation and improve static linearity.
- Advanced process engineering techniques assuring faster switching performance.
- Low-profile surface-mount package for easy installation.
- Integrates NPN Transistors in a three-row configuration.
Applications
The low power dissipation and wide range of benefits make the NSBC123JPDXV6T1G suitable for a variety of applications. Some examples include:
- Audio amplifiers.
- Power amplifiers.
- Programmable logic controllers.
- RF signal amplification.
- Surge protection systems.
- Voltage level shifting.
Working Principle
The working principle of the NSBC123JPDXV6T1G relies on bipolar transistors, which are essentially switches that can be electronically activated and deactivated. When a transistor is in the \'on\' position, current can flow through it. When it is in the \'off\' position, current will not flow through it. Therefore, bipolar transistors can be used to control the flow of current from a power source, depending on the conditions of the circuit.
The pre-biased configuration of the NSBC123JPDXV6T1G is designed to provide static current balance and lower power dissipation. With an integrated bias circuit, it sources voltage base-currents to each transistor, creating an overall linear behavior in the circuit. This helps to ensure that the transistor array operates within its specified parameters and efficiently controls the current from the power source.
In summary, the NSBC123JPDXV6T1G is a pre-biased array of bipolar transistors that can be used to control the flow of current from a power source. With an integrated bias circuit and low-profile surface-mount package, it offers performance benefits and a range of practical applications.
The specific data is subject to PDF, and the above content is for reference
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