Allicdata Part #: | NTJD1155LT1-ND |
Manufacturer Part#: |
NTJD1155LT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 8V 1.3A SOT-363 |
More Detail: | Mosfet Array N and P-Channel 8V 1.3A 400mW Surface... |
DataSheet: | NTJD1155LT1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 8V |
Current - Continuous Drain (Id) @ 25°C: | 1.3A |
Rds On (Max) @ Id, Vgs: | 175 mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 400mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Base Part Number: | NTJD1155 |
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NTJD1155LT1 is a small-signal field-effect transistor array with low capacitance. It has excellent frequency response and is suitable for a variety of applications. This article will discuss the application field and working principle of the NTJD1155LT1.
Application Field of the NTJD1155LT1
The NTJD1155LT1 is a versatile device and can be used in a wide range of digital, analogue and RF applications. The device is ideal for small digital logic designs requiring high speed, low power, and low capacitance. Its low output capacitance makes it ideal for use in high speed communications. Its low on-resistance makes it suitable for high current switching and motor control applications. In addition, the device’s high transconductance makes it well suited for use in RF applications such as self-biased amplifiers, oscillators and other high speed circuits.
Working Principle of the NTJD1155LT1
The NTJD1155LT1 is a field-effect transistor array, meaning it is composed of many individual transistors. The device is made up of three separate N-channel MOSFETs, each capable of operating independently. The device has a relatively high input impedance and so is sensitive to small voltage signals. When an input voltage is applied, the MOSFETs open and the output current flows through to the collector/drain.
The NTJD1155LT1 device is also able to operate in both enhancement and depletion mode. In enhancement mode, the current flow is controlled by the gate voltage, while in depletion mode the current flow is controlled by the drain voltage. The device is designed so that it can be switched between the two modes at any time.
Conclusion
The NTJD1155LT1 is a versatile and powerful small-signal field-effect transistor array. Its low capacitance and high transconductance make it well suited for a variety of digital, analogue and RF applications. Its low output capacitance makes it ideal for use in high speed communications, while its low on-resistance makes it suitable for high current switching and motor control applications. In addition, the device can be easily switched between enhancement and depletion mode at any time, making it highly flexible.
The specific data is subject to PDF, and the above content is for reference
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