Allicdata Part #: | NTJD4401NT4G-ND |
Manufacturer Part#: |
NTJD4401NT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 20V 0.63A SOT363 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 630mA 270mW Su... |
DataSheet: | NTJD4401NT4G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 630mA |
Rds On (Max) @ Id, Vgs: | 375 mOhm @ 630mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 46pF @ 20V |
Power - Max: | 270mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Base Part Number: | NTJD4401N |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NTJD4401NT4G is a surface mount Quad N-Channel Enhancement Mode MOSFET Array developed by ON Semiconductor – a leading innovator in the power semiconductor marketplace. This device combines four N-Channel Power MOSFETs in a single package and can effectively handle many different applications where a simple switch is needed. The NTJD4401NT4G offers users a reliable and cost-effective choice, helping them reduce complexity and the number of components they need while enabling superior design optimization and performance.
The NTJD4401NT4G consists of four N-Channel MOSFETs configured as a single array, with each MOSFET having its own independent gate and source/drain connections. This device offers low on-state resistance with a breakdown voltage of 55 V, a maximum gate-source voltage of +-20V, and an operating temperature ranging from -55 to 150 degrees C. The device also has a high level of thermal and electrical protection with an integrated electrostatic discharge (ESD) protection circuit. The NTJD4401NT4G has a wide range of input and output variability, making it suitable for a variety of applications, including automotive, industrial and consumer products.
The NTJD4401NT4G is a versatile device that can be used in a variety of applications, such as power on/off switching and control, energy savings, and temperature control applications. It can also be used for biasing circuits, and as a driver for high power applications such as switching for motors, relays, and loads. It has a high level of internal protection to ensure the MOSFETs are not damaged when subjected to large voltages or high current applications.
The working principle of the NTJD4401NT4G is similar to other types of MOSFETs, in which current is controlled by a small gate voltage applied to the gate electrode of the device. When the gate voltage is low, current flows through the device, while when the voltage is higher, current through the device is cut off. This makes it ideal for power-saving and power-on/off applications.
In conclusion, the NTJD4401NT4G is an excellent power MOSFET array for many different applications. It offers high levels of electrical and thermal protection, low on-state resistance, and excellent power handling capabilities. It is a cost effective and reliable option for optimizing design performance and reducing component complexity.
The specific data is subject to PDF, and the above content is for reference
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