NTJD4401NT4G Allicdata Electronics
Allicdata Part #:

NTJD4401NT4G-ND

Manufacturer Part#:

NTJD4401NT4G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 20V 0.63A SOT363
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 630mA 270mW Su...
DataSheet: NTJD4401NT4G datasheetNTJD4401NT4G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA
Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Base Part Number: NTJD4401N
Description

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The NTJD4401NT4G is a surface mount Quad N-Channel Enhancement Mode MOSFET Array developed by ON Semiconductor – a leading innovator in the power semiconductor marketplace. This device combines four N-Channel Power MOSFETs in a single package and can effectively handle many different applications where a simple switch is needed. The NTJD4401NT4G offers users a reliable and cost-effective choice, helping them reduce complexity and the number of components they need while enabling superior design optimization and performance.

The NTJD4401NT4G consists of four N-Channel MOSFETs configured as a single array, with each MOSFET having its own independent gate and source/drain connections. This device offers low on-state resistance with a breakdown voltage of 55 V, a maximum gate-source voltage of +-20V, and an operating temperature ranging from -55 to 150 degrees C. The device also has a high level of thermal and electrical protection with an integrated electrostatic discharge (ESD) protection circuit. The NTJD4401NT4G has a wide range of input and output variability, making it suitable for a variety of applications, including automotive, industrial and consumer products.

The NTJD4401NT4G is a versatile device that can be used in a variety of applications, such as power on/off switching and control, energy savings, and temperature control applications. It can also be used for biasing circuits, and as a driver for high power applications such as switching for motors, relays, and loads. It has a high level of internal protection to ensure the MOSFETs are not damaged when subjected to large voltages or high current applications.

The working principle of the NTJD4401NT4G is similar to other types of MOSFETs, in which current is controlled by a small gate voltage applied to the gate electrode of the device. When the gate voltage is low, current flows through the device, while when the voltage is higher, current through the device is cut off. This makes it ideal for power-saving and power-on/off applications.

In conclusion, the NTJD4401NT4G is an excellent power MOSFET array for many different applications. It offers high levels of electrical and thermal protection, low on-state resistance, and excellent power handling capabilities. It is a cost effective and reliable option for optimizing design performance and reducing component complexity.

The specific data is subject to PDF, and the above content is for reference

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