NTJD5121NT2G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTJD5121NT2G is a high-voltage alternative to MOSFET array for applications where increased power density and efficiency are desired. It operates as a conventional single-pole-double-throw (SPDT) non-inverting array using a single control signal, enabling high switching performance with minimal components.

Design

The NTJD5121NT2G design consists of an array of 20 n-channel MOSFETs, each integral to a separate switch. This is in contrast with conventional SPST switches, which have only one MOSFET each. The 20-channel MOSFET array has one common source and 20 individual split gates, allowing for a simultaneous switching of the 20 different MOSFETs.

Each MOSFET is designed to operate in a complementary or ‘anti-phase’ mode, where the two MOSFETs associated with a single pole are switched in opposing directions. This means that when one MOSFET is turned ON, the other is turned OFF and vice versa. This allows the NTJD5121NT2G to act as a SPDT non-inverting array, providing high level of ON/OFF control.

Application Fields

The NTJD5121NT2G provides a reliable and efficient alternative to conventional discrete MOSFETs for a variety of applications ranging from automotive electronics to industrial power switchgear. The higher power density and switching efficiency makes it ideal for applications where space and power are limited.

In automotive applications, the NTJD5121NT2G can be used for digital actuators, for controlling the power supply to components such as digital sensors. The switch array is also ideal for use in automotive HVAC systems as it can be used to regulate the blower speed and other digital functions.

In industrial applications, the NTJD5121NT2G is widely used as a power switch, providing reliable and efficient power conversion control. It provides cost effective and reliable control of heavy current loads, enabling higher efficiency and less power consumption than would be achievable using a standard MOSFET array. The ability of the array to provide simultaneous conduction of 20 MOSFETs also makes it ideal for power factor correction or pulse-width modulation applications.

Working Principle

The NTJD5121NT2G works by providing a common source for the 20 n-channel MOSFETs in the array, and individual split gates for each channel. The MOSFETs are arranged in an ‘anti-phase’, meaning that when one MOSFET is turned on, the other is turned off. This allows for a single control signal to provide all the digital control necessary for a SPDT, non-inverting switch array.

When the gate voltage is applied to the source, a current flows through the MOSFET and the connection from the source to the drain is made, allowing current to flow through the circuit. The voltage applied to the gate controls the amount of current which flows, therefore enabling power regulation control.

When the gate voltage is removed, the connection between the source and the drain is broken, and no current flows through the circuit. This provides an instant ‘ON/OFF’ switch, enabling fast switching and power control.

Conclusion

The NTJD5121NT2G is a high-voltage, high-density array of MOSFETs, ideal for applications where space and power are limited. It provides simultaneous control of 20 MOSFETs, allowing for high switching performance with minimal components. The MOSFETs are arranged in an ‘anti-phase’, enabling a single control signal to provide all the digital control necessary for a SPDT, non-inverting switch array.

The NTJD5121NT2G is a reliable and efficient power switch, providing cost effective and reliable control of heavy current loads, as well as a range of digital functions. It is widely used in automotive and industrial applications, providing increased power density and efficiency for a variety of applications.

The specific data is subject to PDF, and the above content is for reference