Allicdata Part #: | NTJD4158CT2G-ND |
Manufacturer Part#: |
NTJD4158CT2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 30V/20V SC88-6 |
More Detail: | Mosfet Array N and P-Channel 30V, 20V 250mA, 880mA... |
DataSheet: | NTJD4158CT2G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V, 20V |
Current - Continuous Drain (Id) @ 25°C: | 250mA, 880mA |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 10mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.5nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 33pF @ 5V |
Power - Max: | 270mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Base Part Number: | NTJD4158C |
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NMOS (N-channel Metal Oxide Semiconductor) transistors represent an important part of the condensed matter semiconductor family because they are versatile components with a wide variety of applications. One example of a NMOS device is the NTJD4158CT2G, a high-current low-voltage power supply transistor array.
The open drain structure of the NTJD4158CT2G enables it to be tailored for applications such as industrial control, consumer electronics and automotive applications. The device is composed of various NMOS transistors providing improved control and low on-resi,attribution time. Atmel’s NTJD4158CT2G may be used as an external or an internal power solution, as well as a power supply for low voltage applications. Its power dissipation rating of 600 mW can be increased to up to 8A. It requires a 25V gate-to-source minimum operation voltage and an operating temperature range of -20 to +85°C.
Atmel\'s NTJD4158CT2G power supply transistor array also features reduced switching and on-resistance as well as a minimized output impedance, enabling high-speed applications in demanding conditions. Its power-saving design with very low current consumption make the array ideal for use in mobile and battery-operating applications. The NTJD4158CT2G also offers eight channels with total gate-source voltages of up to 32 V, enabling the device to efficiently provide power for low-voltage applications.
The NTJD4158CT2G employs MOSFETs technology (metal oxide semiconductor field-effect transistors) allowing the device to operate with extremely high switching speed, enabling the NTJD4158CT2G to efficiently convert AC voltage to DC voltage with minimal heat dissipation. The device also offers adjustable control voltages, enabling it to be fully tailored to fit specific applications such as integrated circuit power supply and LED lighting.
The NTJD4158CT2G MOSFET array is incredibly efficient in its power consumption and offers enhanced reliability with minimal thermal stress. Low operating current enables the device to be used in battery-powered applications without the need for additional cooling. The device also features integrated over-voltage protection, making it suitable for many automotive applications. The NTJD4158CT2G can be used in a wide variety of applications from variable speed drives to consumer electronics.
Atmel’s NTJD4158CT2G is a truly versatile device with a wide range of applications and excellent performance characteristics. With its low on-resistance and reduced switch-on impedance, the NTJD4158CT2G is a reliable power supply transistor array that can be used for a variety of applications. Its MOSFET technology allows it to operate with extremely high power efficiency, and its low current consumption makes it ideal for use in battery-operated devices and mobile applications.
The specific data is subject to PDF, and the above content is for reference
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