NTJD4105CT2G Allicdata Electronics

NTJD4105CT2G Discrete Semiconductor Products

Allicdata Part #:

NTJD4105CT2GOSTR-ND

Manufacturer Part#:

NTJD4105CT2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N/P-CH 20V/8V SOT-363
More Detail: Mosfet Array N and P-Channel 20V, 8V 630mA, 775mA ...
DataSheet: NTJD4105CT2G datasheetNTJD4105CT2G Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V, 8V
Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA
Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Base Part Number: NTJD4105C
Description

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NTJD4105CT2G is a power metal oxide semiconductor field-effect transistor (MOSFET) array. It is a four-channel, N-channel transistor array that was designed to operate as power switches. It features a modular integrated circuit (IC) package, along with a low on-resistance and fast switching times. The NTJD4105CT2G has a single-ended gate when compared with more complex MOSFET technologies.

Applications of the NTJD4105CT2G include high-power DC-DC converters, motor drivers and stepper motor drivers. It is used in a variety of consumer and industrial applications where fast, low-voltage switching is required.

The NTJD4105CT2G MOSFET array works in a similar manner as a single MOSFET transistor. It has four N-channel semiconductor transistors that are connected in parallel, thus providing a high on-resistance and low off-resistance when compared to using a single transistor. Pins 1 and 4 of the IC represent the gate of the transistor, whereas pins 2 and 3 represent the source and drain. When a voltage is applied to the gate, N-type electrons within the semiconductor channel will move to the source and the transistor will be in its "on" state. If a voltage is applied to the source and the drain, then the MOSFET transistor is in its "off" state.

The NTJD4105CT2G is a robust power MOSFET array that is designed to deliver high performance levels in a variety of demanding applications. It has a low on-resistance of 30 mΩ, along with a fast switching time of 1.26 ns. The array is capable of delivering a high level of power with a maximum drain-source voltage of 40 V and a maximum current of 1 A. It is available in a TSSOP-16 package, making it well suited for applications that require a small footprint.

The NTJD4105CT2G power MOSFET array is a versatile and powerful switching device that can be used in many applications. It features a low on-resistance and a fast switching time. The TSSOP-16 package size makes it easy to integrate into various applications. The NTJD4105CT2G is a great choice for applications that require high-power, fast-switching capability, making it popular for use in DC-DC converters, motor drivers and stepper motor drivers.

The specific data is subject to PDF, and the above content is for reference

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