NTJD4105CT2G Discrete Semiconductor Products |
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Allicdata Part #: | NTJD4105CT2GOSTR-ND |
Manufacturer Part#: |
NTJD4105CT2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N/P-CH 20V/8V SOT-363 |
More Detail: | Mosfet Array N and P-Channel 20V, 8V 630mA, 775mA ... |
DataSheet: | NTJD4105CT2G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N and P-Channel |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V, 8V |
Current - Continuous Drain (Id) @ 25°C: | 630mA, 775mA |
Rds On (Max) @ Id, Vgs: | 375 mOhm @ 630mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 46pF @ 20V |
Power - Max: | 270mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Base Part Number: | NTJD4105C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
.NTJD4105CT2G is a power metal oxide semiconductor field-effect transistor (MOSFET) array. It is a four-channel, N-channel transistor array that was designed to operate as power switches. It features a modular integrated circuit (IC) package, along with a low on-resistance and fast switching times. The NTJD4105CT2G has a single-ended gate when compared with more complex MOSFET technologies.
Applications of the NTJD4105CT2G include high-power DC-DC converters, motor drivers and stepper motor drivers. It is used in a variety of consumer and industrial applications where fast, low-voltage switching is required.
The NTJD4105CT2G MOSFET array works in a similar manner as a single MOSFET transistor. It has four N-channel semiconductor transistors that are connected in parallel, thus providing a high on-resistance and low off-resistance when compared to using a single transistor. Pins 1 and 4 of the IC represent the gate of the transistor, whereas pins 2 and 3 represent the source and drain. When a voltage is applied to the gate, N-type electrons within the semiconductor channel will move to the source and the transistor will be in its "on" state. If a voltage is applied to the source and the drain, then the MOSFET transistor is in its "off" state.
The NTJD4105CT2G is a robust power MOSFET array that is designed to deliver high performance levels in a variety of demanding applications. It has a low on-resistance of 30 mΩ, along with a fast switching time of 1.26 ns. The array is capable of delivering a high level of power with a maximum drain-source voltage of 40 V and a maximum current of 1 A. It is available in a TSSOP-16 package, making it well suited for applications that require a small footprint.
The NTJD4105CT2G power MOSFET array is a versatile and powerful switching device that can be used in many applications. It features a low on-resistance and a fast switching time. The TSSOP-16 package size makes it easy to integrate into various applications. The NTJD4105CT2G is a great choice for applications that require high-power, fast-switching capability, making it popular for use in DC-DC converters, motor drivers and stepper motor drivers.
The specific data is subject to PDF, and the above content is for reference
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