NTJD1155LT1G Discrete Semiconductor Products

Introduction

The NTJD1155LT1G is a series of power and high voltage integrated circuit (IC) manufactured and developed by NXP (formerly known as Philips). NTJD1155LT1G contains a series of transistors, field effect transistors (FETs) and metal oxide semiconductor FETs (MOSFETs) array, and is considered as a power IC. Power ICs are widely used in many electronic circuits, and are especially valuable in application fields which involve interference and stability. In this article, the application fields and working principle of NTJD1155LT1G will be discussed in detail.

Application Fields

The NTJD1155LT1G series of power and high voltage IC is an ideal component for setting up regulated power supplies as it is featured with low power dissipation, excellent temperature stability, high voltage withstandability and good surge capability. In addition, its high-voltage MOSFET array can provide medium power switching ability which make the IC especially suitable for application involved with medium-power switching, such as the power supply and output stage of industrial control power systems, motor controlling units, and so on.

In practical application, NTJD1155LT1G can be used as switching element for testing of temperature, light and humidity levels, as data buffer and input stage in digital computers, as amplifier for high-frequency signal input circuitry, and as DC/DC converter for ICs like microcomputers, ASICs and DSPs.

Working Principle

The NTJD1155LT1G series of power IC is built with a three-stage voltage regulator circuit. There are four N-channel MOSFETs and three P- channel MOSFETs. Both P-channel and N-channel MOSFETs are designed with a linear voltage controlling programme. Such circuits of multiple-stages regulation provide buffer power supply, ensure healthy operating environment and reduce interference.

The N-channel MOSFETs are responsible for the input and feedback. The voltage feedback current is sent to the N-channel MOSFETs and then fed back to the input. At the same time, the voltage arising from the circuit is detected by the N-channel MOSFET which enables the voltage output to remain stable. On the other hand, the P-channel MOSFETs are responsible for the over-voltage protection and temperature compensation. Negative temperature coefficient can be measured when the power transistor is heated up and the voltage is increased, which then initiate a launch loading current through the P-channel MOSFETs to reduce the voltage output. Such over-voltage protection mechanism helps prevent the IC chips from malfunctioning, and also ensures the stability and durability of the circuit.

Conclusion

In summary, the NTJD1155LT1G series of high voltage ICs provides an array of transistors and FETs for application in power supplies, motor controlling units, and other power-requiring electronic circuitry. Its unique three-stage regulating circuit design and over-voltaging protection mechanism also provide a reliable source of power and extra stability. NTJD1155LT1G is an essential component for circuitry designers as it provides a stable environment for other electronic components with minimum energy consumption.