Allicdata Part #: | NTJD4001NT2G-ND |
Manufacturer Part#: |
NTJD4001NT2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 30V 0.25A SOT363 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 250mA 272mW Su... |
DataSheet: | NTJD4001NT2G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 250mA |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: | 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.3nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 33pF @ 5V |
Power - Max: | 272mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
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Namination type Junction FET (NTJD4001NT2G) is a kind of structure junction field-effect transistor which has a two layer structure which is composed of a series of elements, normally achieved through a standard process often referred to as “double diffused MOSFET” (DMOSFET) technology. A DMOSFET has a lower Ron (input resistance) than a standard N-channel MOSFET and is suited for use in a variety of applications due to its improved performance.
In terms of application, NTJD4001NT2G can be used for power switches, current mode applications, high frequency switching and fast switching speed. It is also suitable for use in switching converters, where low on-state resistance gives improved efficiency.
In terms of working principle, NTJD4001NT2G is a voltage controlled device. It relies on a junction capacitor to create an insulated channel in a termination layer between the source and the drain. When a voltage is applied between the source and drain, it creates an electric field which causes a depletion region along the channel. This depletion region then controls the flow of current between the source and drain. In a MOSFET, the electric field is created by applying a gate voltage and usually involves applying a gate voltage which is slightly below the threshold voltage level of the FET. This gate voltage creates an electric field which causes electrons to be attracted to the adjacent layer of materials.
Therefore, when a suitable voltage is applied to the gate of a transistor such as NTJD4001NT2G, the electric field modulates the amount of current that is allowed to flow between the source and the drain. This type of FET is generally known as an "array FET", as it consists of an array of identical elements connected in series between the source and the drain.
In conclusion, NTJD4001NT2G is an ideal type of array FET which has low on-state resistance. It is suitable for a variety of application such as power switches, current mode applications, high frequency switching and fast switching speed due to its improved performance. Acting as a voltage controlled device, NTJD4001NT2G relies on a junction capacitor to create an insulated channel in a termination layer between the source and the drain and the electric field created by applying a gate voltage below the threshold voltage level of the FET to modulate the amount of current that is allowed to flow between the source and the drain.
The specific data is subject to PDF, and the above content is for reference
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