NTJD4105CT4

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V, 8V
Current - Continuous Drain (Id) @ 25°C:	630mA, 775mA
Rds On (Max) @ Id, Vgs:	375 mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	46pF @ 20V
Power - Max:	270mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-TSSOP, SC-88, SOT-363
Supplier Device Package:	SC-88/SC70-6/SOT-363
Base Part Number:	NTJD4105C

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTJD4105CT4 Application Field and Working Principle

NTJD4105CT4 is a product belonging to the family of transistors, FETs, MOSFETs and arrays. This device is an integrated circuit designed and packaged to form an array of 4, N-Channel MOSFETs (Metal Oxide Semiconductor Field Effect Transistor).MOSFETs are a type of transistor. Transistors are widely used as switching devices or amplifying devices in various electronic devices. They are used to control the flow of current from one location to another. In electronics, FETs are widely used components that are used to control the current flow between two terminals, mainly due to the voltage applied to the gate terminal. MOSFETs are the most commonly used type of FET since it provides better performance due to their superior properties.The NTJD4105CT4 is a specific type of MOSFET which is designed to be used in high power and high voltage applications. This device has four N-channel MOSFET arrays each consisting of two MOSFETs, which have a breakdown voltage of 500 V each and a rated current of 30 Amps. These MOSFETs can handle high power and voltage ratings, which is the reason why they are used in high power applications such as home appliances, automotive and industrial equipment.The working principle of the NTJD4105CT4 is based on the phenomenon of electrical field-effect, which is a phenomenon that occurs when a voltage is applied on the gate terminal of the MOSFET. When a voltage is applied to the gate terminal, an electrical field will be created in the region between the gate and the source of the MOSFET. This field will alter the shape of the electric potential around the source, which in turn will cause a change in the electric current. This process is known as the field-effect and it is the basis for the working of the NTJD4105CT4.When a voltage is applied to the gate terminal, this causes a current to flow between the source and the drain of the MOSFET. This current is known as the drain current, and it will depend on the voltage applied to the gate terminal. The higher the voltage that is applied, the higher the drain current that will flow through the device. Furthermore, the current will only flow in a single direction, which is from the drain to the source. The UTJD4105CT4 can therefore be used as a switch, where a certain voltage can be applied to the gate so that the device is able to regulate the current to specific levels.The NTJD4105CT4 is a very useful device in high power applications, mainly because it is able to regulate the current to high levels and because it can handle voltages of up to 500V. This makes it ideal for use in home appliances, automotive, and industrial equipment. Furthermore, the working principle of this device is based on the phenomenon of electrical field-effect, which allows it to be used as a switch. By varying the voltage applied to the gate terminal, the current that is able to flow through the device can be regulated.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description