NTJD5121NT1G Discrete Semiconductor Products

Features

• Low RDS(on)

• Low Gate Threshold

• Low Input Capacitance

• ESD Protected Gate

• NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

• This is a Pb−Free Device

Applications

• Low Side Load Switch

• DC−DC Converters (Buck and Boost Circuits)

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.

4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H.

5. DATUMS A AND B ARE DETERMINED AT DATUM H.

6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.

7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.

ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT