Allicdata Part #: | NTJD4401NT1OS-ND |
Manufacturer Part#: |
NTJD4401NT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 20V 0.63A SOT363 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 630mA 270mW Su... |
DataSheet: | NTJD4401NT1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Base Part Number: | NTJD4401N |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 630mA |
Rds On (Max) @ Id, Vgs: | 375 mOhm @ 630mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 46pF @ 20V |
Power - Max: | 270mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
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The NTJD4401NT1 is part of a family of advanced arrays containing N-channel MOSFETs. These devices are intended for use in a variety of applications including audio amplifiers, digital power supplies, switching power converters, motor control, and other high voltage, high frequency DC-DC and AC-DC circuits. The NTJD4401NT1 can also be used in power management applications, including voltage, current and temperature monitoring.
The NTJD4401NT1 is an array of four N-channel MOSFETs. It is designed for compatibility with general-purpose N-channel FETs, making it suitable for use in a variety of switching and control circuits. The NTJD4401NT1 features a low on-state resistance and is able to handle high current demands, making it suitable for high-power switching applications.
The operation of the NTJD4401NT1 device begins by applying a gate voltage to the gate terminals. When a positive voltage is applied to the gate, the channel is opened and current may flow through the channel. The current is regulated by the amount of voltage applied to the gates. The device has an on-resistance of 5Ω, which translates to a current of 200mA for a 10V gate voltage.
The NTJD4401NT1 has a large input capacitance, which can be an advantage in some situations. The capacitance helps reduce switching transients, allowing higher switching frequencies, which can result in lower device losses and improved efficiency in some power conversion applications.
The device also features a high peak output current rating, allowing it to easily handle high peak load currents. This is especially useful in motor control circuits, where high-peak, full-wave rectified waveforms may be present. The device also features low reverse transfer capacitance, which can reduce noise in some applications.
The NTJD4401NT1 features two gate source pins rather than a single source pin. This reduces gate-to-source voltage drops, resulting in better efficiency and better thermal performance. The device also has a low input current rating, which helps to reduce power losses.
The NTJD4401NT1 is rated for operation at temperatures ranging from -55°C to + 175°C. This extended temperature range makes the device well-suited for automotive and industrial applications. The device also features a rugged silicone coating that helps protect the exposed surfaces from environmental hazards.
In conclusion, the NTJD4401NT1 is an array of four N-channel MOSFETs. It has a low on-state resistance and high peak output current rating, making it suitable for high-power switching applications. The device has an extended temperature range, low input current rating, and high input capacitance, making it suitable for various power management applications. The rugged silicone coating helps protect the device from environmental hazards, making it suitable for automotive and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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