NTJD3158CT2G Allicdata Electronics
Allicdata Part #:

NTJD3158CT2G-ND

Manufacturer Part#:

NTJD3158CT2G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N/P-CH 20V SC88-6
More Detail: Mosfet Array N and P-Channel 20V 630mA, 820mA 270m...
DataSheet: NTJD3158CT2G datasheetNTJD3158CT2G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA, 820mA
Rds On (Max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Power - Max: 270mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Description

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The NTJD3158CT2G is one of many new types of transistor arrays. It is specially designed to be used in the field of discreet logic and signal processing. It is an integrated circuit which features two P-channel MOSFETs in three rows of balls on a plastic surface mount package. It is a general purpose low-power MOSFET array suitable for a variety of applications including high voltage switching, output driver circuits and signal buffering.

The NTJD3158CT2G is a popular choice for low power applications due to its relatively low gate-source capacitance and low threshold voltage of 4.5 volts. The gate-to-drain capacitance is also minimized, resulting in low power dissipation and improved circuit efficiency. It has a low on-state resistance and an extremely fast switching speed. Its guaranteed logic level of 2 Gbps allows for high-speed signal transmission with minimal power requirements. Its maximum VDSS is rated at 6V and its maximum ID is rated at 500mA.

The working principle of the NTJD3158CT2G is relatively simple. When a gate voltage is applied, the transistor turns on, allowing current to flow from the drain to the source terminals, altering the output voltage. The gate-source voltage determines which transistor conducts, resulting in either a high or low level at the output. The cell includes two transistors connected in a complementary arrangement, which offers protection against failure. The two transistors are arranged in a common source and serve as the input and output ports. The inputs are driven by a logic signal, whilst the outputs are driven by an external circuit.

The NTJD3158CT2G is designed for low power applications and optimized for high speed operation in highly integrated circuitry. This device is ideal for use as an output driver, amplifier and multiplexer. It is capable of handling high frequency signals with very low distortion. This device is simple to use, can provide reliable operation, and is perfect for use in industrial, consumer, military and automotive applications.

Overall, the NTJD3158CT2G is a popular and versatile device that can be used in a wide range of applications. Its fast switching speed and low power requirements make it ideal for low power applications. Its reliability and high speed operation make it a great choice for many applications, including high frequency signal transmission and output driver circuits. Furthermore, its relatively low cost makes it accessible for many projects.

The specific data is subject to PDF, and the above content is for reference

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