NTJD2152PT1G Discrete Semiconductor Products |
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Allicdata Part #: | NTJD2152PT1GOSTR-ND |
Manufacturer Part#: |
NTJD2152PT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2P-CH 8V 0.775A SOT-363 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 8V 775mA 270mW Sur... |
DataSheet: | NTJD2152PT1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 8V |
Current - Continuous Drain (Id) @ 25°C: | 775mA |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 570mA, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 225pF @ 8V |
Power - Max: | 270mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
Base Part Number: | NTJD2152P |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NTJD2152PT1G is a P-channel, field-effect transistor (FET) array that is typically used to achieve high-current switching applications on a single device. With low on-resistance and low gate charge, the chip array is designed to provide improved efficiency as compared to other FETs. This array is most suited for use in switching power supply applications, such as motor drives and battery charger circuits, due to its performance and small size.
This type of FET array consists of two 30V P-channel FETs. Each FET has two separate gates, allowing them to be used in a parallel configuration, which increases the maximum load current and the load voltage capability. The gate-to-source voltage is rated at 20V, and the on-resistance is 6Ω. This array has a total gate charge of 56nC, making it an excellent choice for high-current switching applications.
The NTJD2152PT1G is an excellent option for use in DC-DC converters, as well as high-current, high-frequency switching applications. Its low on-resistance and low gate charge allow for low power dissipation and high efficiency. It can also be used in motor control circuits, as well as battery charger and AC-DC converters. The chip can handle up to 35A load current, allowing it to be used in high-power switching applications.
The working principle of a P-channel FET array is quite simple. The gate of the FET is connected to the source, and a bias voltage is applied to the gate in order to turn on the FET. When turned on, the FET acts as a switch, allowing current to flow through it. The current flow is regulated by the size of the voltage applied to the gate, as well as the physical size of the FET.
The NTJD2152PT1G is an ideal choice for applications requiring high-current switching. Its low on-resistance and low gate charge make it an excellent choice for switching power supplies, DC-DC converters, motor control circuits, and battery charger circuits. It is also well suited for high-frequency switching applications due to its small size and fast switching time.
The specific data is subject to PDF, and the above content is for reference
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