NTJD4001NT1 Allicdata Electronics
Allicdata Part #:

NTJD4001NT1OS-ND

Manufacturer Part#:

NTJD4001NT1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 30V 0.25A SOT363
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 250mA 272mW Su...
DataSheet: NTJD4001NT1 datasheetNTJD4001NT1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Power - Max: 272mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

NTJD4001NT1 is a type of application field designed with field effect transistor (FET) and a system of further enhancement. FETs are transistors with a base, which functions as a control electrode. When suitable voltage is present, the FET will create an electric current source or sink. MOSFETs have three terminals, and are more advanced in that they allow electric control without any integrated circuit. The separate n-type and p-type substrate allows for simpler current flow and the production of high output power.

NTJD4001NT1 arrays are used primarily for high frequency applications. The integrated circuit has many different variants, each specifically designed for different applications. The effect of the array is that it is able to amplify the input to produce a significantly increased output. This is invaluable in many hi-tech applications such as those found within telecommunications, computer and automotive electronics.

The main working principle of the NTJD4001NT1 is to let it behave as a switch and to control current flow. Each device consists of a channel of n-type material in between two p-type semiconductor substrates. A gate electrode is placed at the junction of the two terminals and this is where the current flow control is possible. Utilizing the gate voltage, an electric field is formed between the source and drain. This electric field can then determine the amount of current to flow.

The NTJD4001NT1 array is able to amplify the output power and provide optimized linear operation. The devices can be configured to increase the input and output of the system. By manipulating the devices’ gate voltage and its output resistance, the users are able to maximize the performance. Furthermore, each device also has its own limitation on the maximum current capacity and peak dissipated power.

The NTJD4001NT1 application field is found in many high frequency applications, including RF transmitter and receivers, wireless communications, communication satellites and automotive applications such as headlights and fog lamps. In these applications, the array’s enhanced performance over other types of FETs is invaluable. In addition, the various tuning characteristics make the array suitable in both varying and challenging applications.

In summary, the NTJD4001NT1 is an application field specifically designed for high frequency applications. The device boasts many different serving options, including switching and current control, peak dissipated power capability, as well as output power. This array is widely used in a number of applications, such as RF communications and automotive electronics. The array is especially useful for its enhanced performance compared to other FETs, and its user-friendly tunability.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "NTJD" Included word is 29
Part Number Manufacturer Price Quantity Description
NTJD4401NT1 ON Semicondu... 0.0 $ 1000 MOSFET 2N-CH 20V 0.63A SO...
NTJD4001NT1 ON Semicondu... 0.0 $ 1000 MOSFET 2N-CH 30V 0.25A SO...
NTJD2152PT1 ON Semicondu... 0.0 $ 1000 MOSFET 2P-CH 8V 0.775A SO...
NTJD2152PT1G ON Semicondu... -- 1000 MOSFET 2P-CH 8V 0.775A SO...
NTJD1155LT1 ON Semicondu... -- 1000 MOSFET N/P-CH 8V 1.3A SOT...
NTJD2152PT2 ON Semicondu... 0.0 $ 1000 MOSFET 2P-CH 8V 0.775A SO...
NTJD2152PT2G ON Semicondu... 0.0 $ 1000 MOSFET 2P-CH 8V 0.775A SO...
NTJD2152PT4 ON Semicondu... 0.0 $ 1000 MOSFET 2P-CH 8V 0.775A SO...
NTJD2152PT4G ON Semicondu... 0.0 $ 1000 MOSFET 2P-CH 8V 0.775A SO...
NTJD4105CT2 ON Semicondu... 0.0 $ 1000 MOSFET N/P-CH 20V/8V SOT-...
NTJD4105CT4 ON Semicondu... 0.0 $ 1000 MOSFET N/P-CH 20V/8V SOT-...
NTJD4105CT4G ON Semicondu... 0.0 $ 1000 MOSFET N/P-CH 20V/8V SOT-...
NTJD4152PT1 ON Semicondu... 0.0 $ 1000 MOSFET 2P-CH 20V 0.88A SO...
NTJD4401NT2G ON Semicondu... 0.0 $ 1000 MOSFET 2N-CH 20V 0.63A SO...
NTJD4401NT4 ON Semicondu... 0.0 $ 1000 MOSFET 2N-CH 20V 0.63A SO...
NTJD4401NT4G ON Semicondu... 0.0 $ 1000 MOSFET 2N-CH 20V 0.63A SO...
NTJD4158CT2G ON Semicondu... -- 1000 MOSFET N/P-CH 30V/20V SC8...
NTJD4001NT2G ON Semicondu... 0.0 $ 1000 MOSFET 2N-CH 30V 0.25A SO...
NTJD3158CT2G ON Semicondu... 0.0 $ 1000 MOSFET N/P-CH 20V SC88-6M...
NTJD4152PT2G ON Semicondu... 0.08 $ 1000 MOSFET 2P-CH 20V 0.88A SC...
NTJD4001NT1G ON Semicondu... -- 27000 MOSFET 2N-CH 30V 0.25A SO...
NTJD4401NT1G ON Semicondu... 0.08 $ 6000 MOSFET 2N-CH 20V 0.63A SO...
NTJD4152PT1G ON Semicondu... -- 6000 MOSFET 2P-CH 20V 0.88A SO...
NTJD1155LT1G ON Semicondu... -- 1000 MOSFET N/P-CH 8V 1.3A SOT...
NTJD5121NT1G ON Semicondu... -- 8335 MOSFET 2N-CH 60V 0.295A S...
NTJD5121NT2G ON Semicondu... 0.06 $ 1000 MOSFET 2N-CH 60V 0.295A S...
NTJD4105CT1G ON Semicondu... 0.08 $ 1000 MOSFET N/P-CH 20V/8V SOT-...
NTJD4105CT2G ON Semicondu... -- 1000 MOSFET N/P-CH 20V/8V SOT-...
NTJD4158CT1G ON Semicondu... 0.09 $ 1000 MOSFET N/P-CH 30V/20V SOT...
Latest Products
AO4822L_101

MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

AO4822L_101 Allicdata Electronics
SI5944DU-T1-GE3

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

SI5944DU-T1-GE3 Allicdata Electronics
SI4973DY-T1-GE3

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

SI4973DY-T1-GE3 Allicdata Electronics
NTMD6601NR2G

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

NTMD6601NR2G Allicdata Electronics
BUK7K6R2-40E/CX

MOSFET 2N-CH 56LFPAKMosfet Array

BUK7K6R2-40E/CX Allicdata Electronics
PHN210,118

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...

PHN210,118 Allicdata Electronics