Allicdata Part #: | NTJD4001NT1OS-ND |
Manufacturer Part#: |
NTJD4001NT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 30V 0.25A SOT363 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 250mA 272mW Su... |
DataSheet: | NTJD4001NT1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 250mA |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: | 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.3nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 33pF @ 5V |
Power - Max: | 272mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-88/SC70-6/SOT-363 |
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NTJD4001NT1 is a type of application field designed with field effect transistor (FET) and a system of further enhancement. FETs are transistors with a base, which functions as a control electrode. When suitable voltage is present, the FET will create an electric current source or sink. MOSFETs have three terminals, and are more advanced in that they allow electric control without any integrated circuit. The separate n-type and p-type substrate allows for simpler current flow and the production of high output power.
NTJD4001NT1 arrays are used primarily for high frequency applications. The integrated circuit has many different variants, each specifically designed for different applications. The effect of the array is that it is able to amplify the input to produce a significantly increased output. This is invaluable in many hi-tech applications such as those found within telecommunications, computer and automotive electronics.
The main working principle of the NTJD4001NT1 is to let it behave as a switch and to control current flow. Each device consists of a channel of n-type material in between two p-type semiconductor substrates. A gate electrode is placed at the junction of the two terminals and this is where the current flow control is possible. Utilizing the gate voltage, an electric field is formed between the source and drain. This electric field can then determine the amount of current to flow.
The NTJD4001NT1 array is able to amplify the output power and provide optimized linear operation. The devices can be configured to increase the input and output of the system. By manipulating the devices’ gate voltage and its output resistance, the users are able to maximize the performance. Furthermore, each device also has its own limitation on the maximum current capacity and peak dissipated power.
The NTJD4001NT1 application field is found in many high frequency applications, including RF transmitter and receivers, wireless communications, communication satellites and automotive applications such as headlights and fog lamps. In these applications, the array’s enhanced performance over other types of FETs is invaluable. In addition, the various tuning characteristics make the array suitable in both varying and challenging applications.
In summary, the NTJD4001NT1 is an application field specifically designed for high frequency applications. The device boasts many different serving options, including switching and current control, peak dissipated power capability, as well as output power. This array is widely used in a number of applications, such as RF communications and automotive electronics. The array is especially useful for its enhanced performance compared to other FETs, and its user-friendly tunability.
The specific data is subject to PDF, and the above content is for reference
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